Zobrazeno 1 - 10 of 14 pro vyhledávání: '"D. M Knotter"'
1
Cost-effective cleaning and high-quality thin gate oxides
Autor: K. Wolke, Wilfried Vandervorst, Conny Kenens, Twan Bearda, Guido Groeseneken, Ingrid Cornelissen, D. M Knotter, Sofie Mertens, Paul W. Mertens, Ivo Teerlinck, Marc Meuris, S. De Gendt, M.M. Heyns, Tanya Nigam, Lee M. Loewenstein, Robin Degraeve, Marc Schaekers, Rita Vos
Publikováno v: IBM Journal of Research and Development. 43:339-350
Some recent findings in the area of wafer cleaning and thin oxide properties are presented in this paper. Results are shown for a practical implementation of a simplified cleaning concept that combines excellent performance in terms of metal and part
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::66fe93ffe6f24456f9baba27f4cb5962
https://doi.org/10.1147/rd.433.0339
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2
Impact of Iron Contamination and Roughness Generated in Ammonia Hydrogen Peroxide Mixtures (SC1) on 5 nm Gate Oxides
Autor: K. Kenis, D. M Knotter, S. De Gendt, M.M. Heyns, Paul W. Mertens
Publikováno v: Journal of The Electrochemical Society. 145:2589-2594
Immersion of hydrophobic (HF-last) silicon wafers into iron-contaminated ammonia peroxide mixtures (SC solution) results in the ormation of so-called clustered light point defects. At these sites, increased surface microroughness and local higher iro
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f4e005cb88a396a6bdd8102be0565242
https://doi.org/10.1149/1.1838686
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6
Luminescence of copper(I) arenethiolates and its relation to copper(I) luminescence in other complexes
Autor: D. M. Knotter, G. van Koten, G. Blasse, J.P.M. Vliet
Publikováno v: Inorganic Chemistry. 31:2196-2201
The luminescence properties of some trinuclear copper(I) arenethiolates are reported and discussed. Two of these copper(I) arenethiolates, i.e., [CuSC 6 H 4 [(R)-CH(Me)NMe 2 ]-2] 3 and [Cu 3 {SC 6 H 4 [(R)-CH(Me)NMe 2 ]-2} 2 (C≡Ct-Bu)] 2 , show tri
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cb6c3aef933b96f9e1381e9f25eae187
https://doi.org/10.1021/ic00037a038
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8
A novel resist and post-etch residue removal process using ozonated chemistries
Autor: S. De Gendt, M.M. Heyns, Paul W. Mertens, Ingrid Cornelissen, D. M Knotter, Rita Vos, Peter Snee, M. Lux
Publikováno v: 1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216).
A novel, environmentally friendly process is successfully applied for the removal of photoresist and organic post-etch residues from silicon surfaces. The moist ozone gasphase process described, greatly increases the organic removal efficiency. Impro
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1cda3209747c029e74361b78a228c6df
https://doi.org/10.1109/vlsit.1998.689243
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9
Silicon Surface Metal Contamination Measurements using Grazing-Emission XRF Spectrometry
Autor: P.K. de Bokx, G. Wiener, Marc Heyns, S. J. Kidd, S. De Gendt, M. Baeyens, Paul Mertens, K. Kenis, D. M Knotter
Publikováno v: MRS Proceedings. 477
Grazing-Emission X-Ray Fluorescence Spectrometry (GEXRF) is a new analytical X-ray fluorescence technique, which like TXRF takes advantage of the total-reflection phenomenon. The main advantage of GEXRF over TXRF is its sensitivity towards light elem
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1ad638b17b24609eb6e3ed8d106632de
https://doi.org/10.1557/proc-477-397
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