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An InGaAs on Si platform for CMOS with 200 mm InGaAs-OI substrate, gate-first, replacement gate planar and FinFETs down to 120 nm contact pitch

Publikováno v: 2015 Symposium on VLSI Technology (VLSI Technology).

We report on the first demonstration of ultra-thin body (50 nm), low defectivity 200 mm InGaAs-on-insulator (-OI) fabricated by direct wafer bonding technique (DWB) as well as a replacement gate process for self-aligned fully depleted InGaAs MOSFETs.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a19cadec00cf65f8ec90ed285f6439af
https://doi.org/10.1109/vlsit.2015.7223668

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MOVPE III–V material growth on silicon substrates and its comparison to MBE for future high performance and low power logic applications

Autor: G. Dewey, Peter G. Tolchinsky, J. M. Fastenau, Matthew V. Metz, A. Eisenbach, Marko Radosavljevic, T. Stewart, W. K. Liu, Jack Portland Kavalieros, Benjamin Chu-Kung, R. Chau, D. Lubyshev, Niloy Mukherjee, J. Boardman, K. Millard, Han Wui Then

Publikováno v: 2011 International Electron Devices Meeting.

This research work demonstrates, for the first time, that the material quality of MOVPE III–V QWFET structures on Si can be matched to that of the best MBE III–V QWFET structures on Si. The MOVPE grown In 0.53 Ga 0.47 As QW layer on Si exhibits h

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a891fa0b1012418d1cca9c91ec2fc0b1
https://doi.org/10.1109/iedm.2011.6131675

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Fabrication, characterization, and physics of III–V heterojunction tunneling Field Effect Transistors (H-TFET) for steep sub-threshold swing

Autor: Han Wui Then, Roza Kotlyar, J. Boardman, W. K. Liu, Matthew V. Metz, Jack Portland Kavalieros, Benjamin Chu-Kung, P. Oakey, G. Dewey, Ravi Pillarisetty, J. M. Fastenau, Niloy Mukherjee, R. Chau, D. Lubyshev, Marko Radosavljevic

Publikováno v: 2011 International Electron Devices Meeting.

This work demonstrates the steepest subthreshold swing (SS < 60mV/decade) ever reported in a III–V Tunneling Field Effect Transistor (TFET) by using thin gate oxide, heterojunction engineering and high source doping. Owing to a lower source-to-chan

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2caa8c299af0604777416aab5123b508
https://doi.org/10.1109/iedm.2011.6131666

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Electrostatics improvement in 3-D tri-gate over ultra-thin body planar InGaAs quantum well field effect transistors with high-K gate dielectric and scaled gate-to-drain/gate-to-source separation

Publikováno v: 2011 International Electron Devices Meeting.

In this work, 3-D Tri-gate and ultra-thin body planar InGaAs quantum well field effect transistors (QWFETs) with high-K gate dielectric and scaled gate-to-source/gate-to-drain (L SIDE ) have been fabricated and compared. For the first time, 3-D Tri-g

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::32bdc6d1de06cd81e40356570b6b746d
https://doi.org/10.1109/iedm.2011.6131661

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Low-power phototransceiver arrays with vertically integrated resonant-cavity LEDs and heterostructure phototransistors

Autor: D. Lubyshev, W.K. Liu, S. Pradhan, Weidong Zhou, P. K. Bhattacharya

Publikováno v: IEEE Photonics Technology Letters. 13:1218-1220

Low-power phototransceivers and phototransceiver arrays, with vertically integrated high-gain heterojunction phototransistors (HPTs) and resonant-cavity light-emitting diodes (RCLEDs), are demonstrated. A tunnel junction was used as a low resistance

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::dcc0092391d73b7e305770aadfe24f3b
https://doi.org/10.1109/68.959369

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Non-planar, multi-gate InGaAs quantum well field effect transistors with high-K gate dielectric and ultra-scaled gate-to-drain/gate-to-source separation for low power logic applications

Autor: Matthew V. Metz, G. Dewey, Roza Kotlyar, L. Pan, Jack Portland Kavalieros, Uday Shah, W. K. Liu, W. Rachmady, R. Pillarisetty, Niloy Mukherjee, D. Lubyshev, Robert S. Chau, Benjamin Chu-Kung, K. Millard, J. M. Fastenau, Marko Radosavljevic

Publikováno v: 2010 International Electron Devices Meeting.

In this work, non-planar, multi-gate InGaAs quantum well field effect transistors (QWFETs) with high-K gate dielectric and ultra-scaled gate-to-drain and gate-to-source separations (L SIDE ) of 5nm are reported for the first time. The high-K gate die

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::43f8829683a26962416613f2ce210b29
https://doi.org/10.1109/iedm.2010.5703306

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InAs photodiode on semi-insulating GaAs substrate with Zn-diffusion guard-ring for high-speed and low dark current performance

Autor: Jin-Wei Shi, F.-M. Kuo, W.K. Liu, B.-R. Huang, D. Lubyshev, J. M. Fastenau

Publikováno v: 2010 IEEE Photinic Society's 23rd Annual Meeting.

We demonstrate InAs photodiodes on semi-insulating GaAs substrate with Zn-diffusion guard-ring. It exhibits a 3-dB bandwidth as wide as 17 GHz under a small bias (−0.2V) with a reasonable dark current density (11A/cm2) at room temperature.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::671f4c118e3fb6a48ae6539fc497c5b3
https://doi.org/10.1109/photonics.2010.5698945

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