p-type silicon drift detectors: first results

Autor: G. Odyniec, C.J. Naudet, W. Wilson, B. Krieger, D. Krofcheck, M. Partlan, N.W. Wang, H.W. Rudolph, R. O'Donnell, D. Lewak, J.T. Walton

Publikováno v: Wang, N.W.; Krieger, B.; Krofcheck, D.; Lewak, D.; Naudet, C.J.; O'Donnel, R.; et al.(1995). P-type Silicon Drift Detectors: First Results. Lawrence Berkeley National Laboratory: Lawrence Berkeley National Laboratory. Retrieved from: http://www.escholarship.org/uc/item/02q364h3

We have fabricated a 4 cm long, position-sensitive silicon drift detector using high purity, p-type silicon as the starting material. In this paper, we describe the double-sided planar process used to fabricate the detectors and the strategy used to

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b7058c608f7cac1b482898ac075d726f
https://doi.org/10.1109/nssmic.1994.474435

Development of silicon drift detectors for strangeness measurements

Autor: D. Krofchek, J. T. Walton, N. W. Wang, B. Krieger, D. Lewak, R. O'Donnell, M. Partlan, G. Odyniec

Publikováno v: Odyniec, G.J.; Krieger, B.; Krofcheck, D.; Lewak, D.; O'Donnell, R.; Partlan, M.; et al.(1995). Development of Silicon Drift Detectors for Strangeness Measurements. Lawrence Berkeley National Laboratory: Lawrence Berkeley National Laboratory. Retrieved from: http://www.escholarship.org/uc/item/0km133nx

Detection of multi‐strange and charm particles requires precise measurements of the secondary vertices close to the interaction point and the decay products of strange and charm particles. This presents an unprecedented challenge for relativistic h

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::72536e14ffefaee7c3a081a40950cb8a
https://doi.org/10.1063/1.48690