Zobrazeno 1 - 10
of 30
pro vyhledávání: '"D. Lennartz"'
Autor:
W. Beyer, U. Breuer, R. Carius, W. Hilgers, D. Lennartz, F.C. Maier, N.H. Nickel, F. Pennartz, P. Prunici, U. Zastrow
Publikováno v:
Canadian Journal of Physics. 92:700-704
The influence of implanted hydrogen (up to a concentration level of 3 at. %) on the microstructure of silicon (Si) materials is investigated by Fourier transform infrared spectroscopy as well as by effusion of hydrogen and of (low dose) implanted hel
Publikováno v:
MRS Proceedings. 1536:175-180
An important property of thin film silicon and related materials is the microstructure which may involve the presence of interconnected and isolated voids. We report on effusion measurements of implanted helium (He) to detect such voids. Several seri
Publikováno v:
Journal of Non-Crystalline Solids. 358:2023-2026
Effusion measurements of hydrogen and of implanted helium are used to characterize the presence of voids in hydrogenated amorphous silicon (a-Si:H) materials as a function of substrate temperature, hydrogen content, etc. For undoped plasma-grown a-Si
Publikováno v:
MRS Proceedings. 1426:341-346
Effusion measurements of hydrogen and implanted helium are reported for (undoped) amorphous and crystalline Si:H and related materials. Effusion of helium observed at temperatures > 600°C is attributed to isolated voids present in the material from
Publikováno v:
physica status solidi c. 7:557-560
The growth of highly conductive boron doped microcrystalline silicon by the hot wire method was studied. Various series of films were deposited to investigate the influence of the deposition parameters on conductivity, crystallinity and (void-related
Autor:
Hans Strehlow, D. Lennartz
Publikováno v:
Zeitschrift für Physikalische Chemie. 220:641-653
An alternative method of evaluating chemical rate constants from NMR measurements is proposed. The integral over the NMR power spectrum depends on the life times of reacting species in contrast to the integral over the conventional phase sensitive NM
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Autor:
W. Hilgers, D. Lennartz, F.C. Maier, Norbert H. Nickel, P. Prunici, Wolfhard Beyer, Frank Pennartz
Publikováno v:
MRS Proceedings. 1666
Laser heating and annealing of hydrogenated amorphous silicon (a-Si:H) films is of interest for improved material properties. Due to the variety of possible laser treatments with regard to wavelength, pulse duration, scan time etc., the definition of
Publikováno v:
MRS Proceedings. 1321
In thin film silicon solar cell technology, annealing (heat treatment) effects are of interest since (i) annealing of underlying films often cannot be avoided during deposition and (ii) heat treatment (e.g. by laser) may be actively used for improvem
Autor:
Patrick Carl, Marina Bennati, Peter Höfer, Teresa Carlomagno, Christian Griesinger, T. Schippmann, Thorsten Marquardsen, Marcel Reese, Andreas Tavernier, Frank Engelke, D. Lennartz
Publikováno v:
Applied Magnetic Resonance
First results from a liquid-state shuttle dynamic nuclear polarization (DNP) spectrometer are presented. The device polarizes a water sample at 9.7 GHz and 0.34 T in a commercial Bruker electron paramagnetic resonance (EPR) spectrometer and then tran
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::be78d14a858deed24ba88a8417c72878
http://www.springerlink.com/content/h41248w650751474/fulltext.pdf
http://www.springerlink.com/content/h41248w650751474/fulltext.pdf