Rocksalt ZnMgO alloys for ultraviolet applications: Origin of band-gap fluctuations and direct-indirect transitions

Autor: I. Gorczyca, Anna Reszka, Małgorzata Wierzbowska, Henryk Teisseyre, J. Z. Domagala, Fabrice Donatini, N. E. Christensen, D. Le Si Dang, D. Jarosz

Publikováno v: Gorczyca, I, Wierzbowska, M, Jarosz, I D, Domagala, J Z, Reszka, A, Dang, D L S, Donatini, F, Christensen, N E & Teisseyre, H 2020, ' Rocksalt ZnMgO alloys for ultraviolet applications : Origin of band-gap fluctuations and direct-indirect transitions ', Physical Review B, vol. 101, no. 24, 245202 . https://doi.org/10.1103/PhysRevB.101.245202

Rocksalt $\mathrm{Z}{\mathrm{n}}_{x}\mathrm{M}{\mathrm{g}}_{1\ensuremath{-}x}\mathrm{O}$ alloys are theoretically and experimentally investigated for near- and deep-UV optoelectronics with a tunable band gap of 4.2--7.8 eV. Regarding the key question

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b9fd8be02d2573d657382e3d9a43685b
https://doi.org/10.1103/physrevb.101.245202

Study of Au/ZnO nanorods Schottky light-emitting diodes grown by low-temperature aqueous chemical method

Autor: Omer Nur, N. Bano, H. S. Kwack, Magnus Willander, Ijaz Hussain, D. Le Si Dang

Publikováno v: Applied Physics A. 100:467-472

High quality vertically aligned ZnO nanorods (NRs) were grown by low-temperature aqueous chemical technique on 4H-n-SiC substrates. Schottky light-emitting diodes (LEDs) were fabricated. The current-voltage (I–V) characteristics of Schottky diodes

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9e6e1790117732861acc510c2fe9957f
https://doi.org/10.1007/s00339-010-5722-0

The growth and rare-earth doping of GaN quantum dots on AlxGa1-xN layer by plasma-assisted molecular beam epitaxy

Autor: T. Andreev, Yuji Hori, D. Le Si Dang, Edith Bellet-Amalric, Bruno Daudin, Osamu Oda

Publikováno v: physica status solidi (a). 204:290-293

We report on the self organized growth of GaN quantum dots deposited on Al x Ga 1-x N layer by plasma-assisted molecular beam epitaxy. It is found that the relaxation of Al x Ga 1-x N layer on AlN depends on Al composition and thickness. The measurem

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2f8adf0adb7c946ec4cbc68fc2b1660e
https://doi.org/10.1002/pssa.200673542

Growth of GaN-based nanorod heterostructures (core-shell) for optoelectronics and their nanocharacterization

Autor: Joël Eymery, D. Le Si Dang

In recent years, the nanorod technology has emerged as a very promising alternative to high efficiency optoelectronics devices. In this chapter, we discuss potential advantages of the one-dimensional geometry as compared to its planar counterpart for

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4e9893de98b4da83115957b3e8ec7639
https://doi.org/10.1016/b978-1-78242-228-0.00012-0

Experimental Determination of Intrinsic Non-Linearities in Semiconductor Microcavities in the Coherent Regime

Autor: Ph. Roussignol, Jérôme Tignon, Régis André, D. Le Si Dang, R. Romestain, A. Huynh, Claude Delalande

Publikováno v: physica status solidi (a). 190:345-350

We propose a method to determine the intrinsic non-linearities in semiconductor microcavities in the non-perturbative regime. The polariton coherent dynamics is experimentally studied using time-integrated four-wave mixing and analyzed by numerical r

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https://doi.org/10.1002/1521-396x(200204)190:2<345::aid-pssa345>3.0.co