Zobrazeno 1 - 10
of 44
pro vyhledávání: '"D. Lavielle"'
Autor:
H. Ozeki, C. Rosolen, S. de Zotti, J.-L. Varin, D. Lavielle, S. Halbout, L. Gladin, P.-O. Doittau, F. Delbru, P. Claviere, D. Castel, F. Bayle, L. Mazuray, P. Guilleux, J.-C. Barthès
Publikováno v:
International Conference on Space Optics — ICSO 2000.
Publikováno v:
SNA + MC 2013 - Joint International Conference on Supercomputing in Nuclear Applications + Monte Carlo.
RayXpert has been developed to ease the access to the power and accuracy of the 3D Monte Carlo method in the field of gamma dose rate estimate. Optimization methods have been implemented to address dose calculation behind thick 3D structures. At the
Autor:
A.Y. Cho, D. L. Sivco, D. Lavielle, J Sanchez-Dehesa, B. Goutiers, J. C. Portal, E Ranz, E Barbier
Publikováno v:
Semiconductor Science and Technology. 6:445-448
Magnetotransport experiments on delta -doped AlxGa1-xAs (x
Autor:
N Chand, J. C. Portal, R. Sirvin, K. Zitouni, C Grattepain, D. Lavielle, N. Saidi, A. Kadri, E Ranz
Publikováno v:
Semiconductor Science and Technology. 6:510-513
Magnetic freeze-out experiments under hydrostatic pressure have been performed in the temperature range 4.2-77 K on direct-band-gap Si-doped AlGaAs samples. Successive illuminations have been used to monitor the concentrations of the metastable shall
Publikováno v:
Materials Science Forum. :467-470
Autor:
Pierre Gibart, D. Lavielle, J. Singleton, A. Levcuras, J. M. Sallese, J.-C. Grenet, J. C. Portal
Publikováno v:
physica status solidi (a). 119:K41-K45
Publikováno v:
Superlattices and Microstructures. 8:245-248
We report electrical properties of the two dimensional electron gas in selectively S- and Si-doped GaInP/GaAs heterostructures grown by Low Pressure MOCVD. The influence of the spacer thickness on the sheet carrier density derived from Shubnikov-de H
Publikováno v:
Physica Medica. 30:e142
Publikováno v:
Radiotherapy and Oncology. 106:S429-S430
Publikováno v:
Journal of Applied Physics. 76:6825-6827
A high‐resolution scanning electron microscope was used to study the microstructural changes occurring during the desorption and recombination stages in a cast Nd14Fe79B7 alloy HDDR processed at 780 °C. Phase identification was based on backscatte