Normally-off AlGaN/GaN recessed MOS-HEMTs on normally-on epitaxial structures for microwave power applications

Autor: C. Potier, J.C. Jacquet, L. Trinh Xuan, Philippe Bouysse, Raymond Quéré, Piero Gamarra, N. Michel, Stéphane Piotrowicz, M. Oualli, Raphaël Aubry, Sylvain Laurent, Sylvain Delage, D. Lancereau, O. Patard

Publikováno v: 2016 11th European Microwave Integrated Circuits Conference (EuMIC).

This paper presents the realization and characterization of normally-off recessed MOS-HEMTs on a Ka-band-dedicated AlGaN/GaN epitaxial structure. Previous HEMTs results on this structure feature an output power of 3.5 W/mm with PAE of 39 % at 30 GHz

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ad15734afff46639bb549fe0c1508948
https://doi.org/10.1109/eumic.2016.7777490

160W InAlN/GaN HEMTs amplifier at 2 GHz with optimized thermal management

Autor: J.C. Jacquet, Stéphane Piotrowicz, Christophe Gaquiere, Sylvain Delage, M. A. Di-Forte Poisson, Eric Chartier, Raphaël Aubry, N. Sarazin, Erwan Morvan, D. Lancereau, Olivier Jardel, Christian Dua, Jérémy Dufraisse, M. Oualli

Publikováno v: Proceedings of 34th IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012
34th IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012
34th IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012, Oct 2012, La Jolla, CA, United States. pp.1-4, ⟨10.1109/CSICS.2012.6340059⟩
34th IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012, 2012, La Jolla, CA, United States. pp.1-4, ⟨10.1109/CSICS.2012.6340059⟩

International audience; We report on the realization and measurements of InAlN/GaN HEMTs on SiC substrate. At device level, load-pull power measurements were performed at 2 GHz on 2.2mm devices in CW mode. An output power of 10.5W (40.2dBm) with a PA

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1f78667507d58c8783393d5989f036fb
https://hal.science/hal-00801142

First demonstration of AlInN/GaN HEMTs amplifiers at K band

Autor: Stéphane Piotrowicz, S. Leger, G. Callet, Raphaël Aubry, D. Lancereau, Erwan Morvan, M. Oualli, Eric Chartier, N. Sarazin, Christian Dua, Tibault Reveyrand, Olivier Jardel, Sylvain Delage, J.C. Jacquet, M.-A. di Forte Poisson

Publikováno v: 2012 IEEE/MTT-S International Microwave Symposium Digest.

AlInN/GaN HEMTs have shown outstanding power performances for high frequency applications, due in particular to their high current densities and their thinner barrier layers than in AlGaN/GaN HEMTs that minimize short channel effects. In this paper,

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c9a88ee053035a2360217bc5f8c9ce89
https://doi.org/10.1109/mwsym.2012.6259551

State of the Art 58W, 38% PAE X-Band AlGaN/GaN HEMTs Microstrip MMIC Amplifiers

Autor: Z. Ouarch, T. Dean, Tibault Reveyrand, Erwan Morvan, M. A. Di-Forte Poisson, Eric Chartier, Raphaël Aubry, N. Sarazin, D. Thenot, T. Bouvet, Jean-Claude Jacquet, Olivier Jardel, Sylvain Delage, D. Lancereau, Didier Floriot, Y. Gourdel, O. Drisse, Christian Dua, Audrey Martin, J.O. McLean, S. Bansropun, A.J. Hydes, Stéphane Piotrowicz, G. Lecoustre, M. Richard

Publikováno v: IEEE Compound Semiconductor IC Symposium CSICS 2008
IEEE Compound Semiconductor IC Symposium CSICS 2008, Oct 2008, United States. pp 1-4

This paper presents the results obtained on X-Band GaN MMICs developed in the frame of the Kerrigan project launched by the European Defense Agency. A new step was achieved, 58 W of output power with 38% PAE in X-Band were obtained using an 18 mm 2 2

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0a9b5a2d5534a726ccc1698902dba301
https://doi.org/10.1109/csics.2008.39

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