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Autor:
D. Lancefield, Hans Müller-Steinhagen
Publikováno v:
Heat Transfer Engineering. 28:210-215
To produce high-quality white pigment, concentrated sulfuric acid is used to separate TiO2 from the raw material, which is usually an ore or a slag produced from titanium-rich iron ore. After dilution of the sulfuric acid in the crystallizer, it is r
Publikováno v:
physica status solidi c. 4:13-16
CVD. The bare chip device shows a strong UV emission at 380 nm, with a maximum output power of 1.6 mW at 140 mA, and a junction temperature of 120 °C. The saturation of the external quantum efficiency (EQE) occurs at 0.5 kA/cm2 (∼80 mA), a much hi
Autor:
Philippe De Mierry, Sébastien Chenot, Milan R. Kokta, Jennifer Stone-Sundberg, Eric Virey, Damien Pauwels, D. Lancefield, Frank Tinjod
Publikováno v:
physica status solidi c. 3:2199-2202
High quality GaN-based light-emitting diodes (LEDs) can be achieved on alumina-rich spinel (MgAl6O10), a new substrate material with better thermal and lattice match to GaN than sapphire. As alumina-rich spinel is chemically very close to sapphire (A
Autor:
D Lancefield, H Eshghi
Publikováno v:
Journal of Physics: Condensed Matter. 13:8939-8944
The transport properties of Mg-doped, p-type GaN films grown by MOCVD have been measured using Hall effect and resistivity measurements over a temperature range of 400-120 K. The mobility is found to increase slowly over the temperature range of 400-
Autor:
Michael Heuken, Bernard Beaumont, M.A. di Forte-Poisson, D. Lancefield, A Crawford, Pierre Gibart
Publikováno v:
Materials Science and Engineering: B. 82:241-244
We have investigated the electroluminescent properties of GaN and InGaN/GaN test structures grown on sapphire by MOCVD. Studies have been made over the temperature range from 370 to 80 K using a range of currents, pulse widths and duty cycles that re
Publikováno v:
Semiconductor Science and Technology. 16:107-117
Vertical-cavity surface-emitting lasers (VCSELs) are complex multi-layer structures whose operating characteristics are highly sensitive to variations in layer thickness and composition. We have made non-destructive measurements of the thickness of G
Publikováno v:
physica status solidi (b). 216:733-736
Electron transport in GaN is of interest because of its importance in a range of electronic and optoelectronic devices. However, the intrinsic properties may be modified by the presence of scattering centres introduced either as a result of impuritie
Autor:
Terry E. Sale, D. Lancefield, P. J. S. Thomas, P. J. Klar, Alfred R. Adams, Andre Raymond, P. M. A. Vicente, T. J. C. Hosea
Publikováno v:
physica status solidi (b). 211:255-262
Autor:
M.A. di Forte-Poisson, D. Lancefield, J. Di Persio, Estela Pereira, Béla Pécz, M. Tordjman, F. Huet, A. Romann
Publikováno v:
Journal of Crystal Growth. 195:314-318
This paper reports on the structural, optical and electrical properties of LP-MOCVD GaN grown on miscut and exactly oriented sapphire substrates as a function of gas purification. SIMS and C–V experiments achieved on GaN layers indicate that high p