Zobrazeno 1 - 10
of 22
pro vyhledávání: '"D. LaTulipe"'
Autor:
Douglas D. Coolbaugh, Krishna T. Settaluri, Zhan Su, Sen Lin, Chen Sun, Y-H. Chen, Michele Moresco, Vladimir Stojanovic, D. LaTulipe, G. Leake, Sajjad Moazeni, Jeremiah Hebding, Colin McDonough, Michael R. Watts, Erman Timurdogan
Publikováno v:
2015 Fourth Berkeley Symposium on Energy Efficient Electronic Systems (E3S).
Today's electronic photonic integration approaches involve various trade-offs between integration complexity, cost and performance, with no single approach being able to satisfy both the high-performance and low cost/complexity requirements. Luxtera'
Autor:
Sanjay Mehta, R. H. Kim, V. Basker, Sean D. Burns, Kangguo Cheng, Yu Zhu, A. Ebert, Scott Halle, Chen Jia, Karen Petrillo, Soon-Cheon Seo, D. Horak, Vamsi Paruchuri, R. Johnson, T. Levin, Hemanth Jagannathan, J. Faltermeier, Jason E. Cummings, T. Sparks, M. Raymond, Wilfried Haensch, Lahir Shaik Adam, Su Chen Fan, Amit Kumar, N. Berliner, Bala S. Haran, Terry A. Spooner, S. Kanakasabapathy, Stefan Schmitz, J. Kuss, Josephine B. Chang, Thomas S. Kanarsky, Lisa F. Edge, Chiew-seng Koay, Charles W. Koburger, John C. Arnold, S. Holmes, Bruce B. Doris, Erin Mclellan, D. LaTulipe, Martin Burkhardt, D. McHerron, S. Paparao, Donald F. Canaperi, M. Smalley, James J. Demarest, Matt Colburn
Publikováno v:
2008 IEEE International Electron Devices Meeting.
We demonstrate 22 nm node technology compatible, fully functional 0.1 mum2 6T-SRAM cell using high-NA immersion lithography and state-of-the-art 300 mm tooling. The cell exhibits a static noise margin (SNM) of 220 mV at Vdd=0.9 V. We also present a 0
Autor:
E.P. Gusev, V. Narayanan, S. Zafar, C. Cabral, E. Cartier, N. Bojarczuk, A. Callegari, R. Carruthers, M. Chudzik, C. D'Ernic, E. Duch, P. Jamison, P. Kozlowski, D. LaTulipe, K. Maitra, F.R. McFeely, J. Newbury, V. Paruchuri, M. Steen
Publikováno v:
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..
A comparative analysis of charge trapping in advanced metal gate/high-k stacks with EOT below 1 nm (corresponding to CETs, or T/sub inv/, in the 1.2-1.5 nm range) has been carried out. We investigate the effects of: (i) gate electrode material (namel
Publikováno v:
Applied Physics Letters. 57:1078-1080
For applications such as optical interconnects1 it is desirable to have the ability to integrate optical modulators, waveguides and silicon electronics. One system of interest is the class of GaAs multiple quantum well (MQW) structures where optical
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 14:4345
We describe a technique to fabricate (1×) x‐ray masks utilizing an optical reduction tool (SVGL Micrascan II). A special 1× x‐ray mask chuck was constructed to fit the optical tool. The technique takes advantage of the relatively flat x‐ray m
Publikováno v:
Solid-State Electronics. 31:337-340
We have measured the electron velocity in low-doped GaAs and in AlGaAs/GaAs modulation-doped heterostructures at electric fields up to 8000 V/cm at both 300 and 77 K. In order to avoid the charge domain formation which occurs in DC measurements at th
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