Zobrazeno 1 - 10
of 26
pro vyhledávání: '"D. L. Spears"'
Publikováno v:
Applied optics. 20(4)
Remote measurements of a key stratospheric radical species, chlorine monoxide, have been made with a recently developed balloon-borne instrument: a laser heterodyne radiometer. The characteristics of this instrument, which facilitate its use for meas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8237f9a6a928f8c799d8700af1c6b335
https://pubmed.ncbi.nlm.nih.gov/20309153
https://pubmed.ncbi.nlm.nih.gov/20309153
Autor:
D L Spears, R T Ku
Publikováno v:
Optics letters. 1(3)
A blackbody heterodyne radiometer using a widely tunable PbSnSe-diode laser as the local oscillator (LO) achieved signal-to-noise performance that was an order of magnitude better than previously reported and only a factor of 2.5 below that obtained
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f3461c1e99bc3881963327df365c5877
https://pubmed.ncbi.nlm.nih.gov/19680338
https://pubmed.ncbi.nlm.nih.gov/19680338
Autor:
S. S. Choi, I. Melngailis, William D. Goodhue, D. L. Spears, K.M. Molvar, Richard J. Molnar, Michael W. Geis, K. A. McIntosh, A. Lightfoot, Simon Verghese, L.J. Mahoney, R. L. Aggarwal
Publikováno v:
Applied Physics Letters. 75:3485-3487
Avalanche photodiodes have been demonstrated utilizing GaN grown by hydride vapor-phase epitaxy. Spatially uniform gain regions were achieved in devices fabricated on low-defect-density GaN layers that exhibit no microplasma behavior. A uniform multi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbbc62d5e7502bc81f8ff2007f55a8b4
https://doi.org/10.1063/1.125363
https://doi.org/10.1063/1.125363
Autor:
George W. Turner, Michael J. Manfra, H. K. Choi, D. L. Spears, D.M. Depoy, G. W. Charache, Christine A. Wang, L. R. Danielson
Publikováno v:
Applied Physics Letters. 71:3758-3760
A large increase in the quantum efficiency (QE) and open-circuit voltage Voc of GaInAsSb thermophotovoltaic (TPV) devices is obtained by the use of an AlGaAsSb window layer compared with devices without a window layer. The TPV structure, grown on GaS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::584ec24072268da1e03cd91e631102d8
https://doi.org/10.1063/1.120497
https://doi.org/10.1063/1.120497
Autor:
Anish K. Goyal, Antonio Sanchez, George W. Turner, Michael J. Manfra, Scott Buchter, H.K. Choi, D. L. Spears, S.D. Calawa
Publikováno v:
MRS Proceedings. 607
Mid-infrared optically pumped semiconductor lasers (OPSLs) are presently being investigated for a variety of commercial and military applications. Active regions in such optically pumped lasers must meet the dual requirements of high gain and low los
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c9c977f52cf2d87051f272313d3d0d5
https://doi.org/10.1557/proc-607-3
https://doi.org/10.1557/proc-607-3
Publikováno v:
Third NREL Conference on thermophotovoltaic generation of electricity.
The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dcf2ff6b8e278fe6eb94be2370298706
https://doi.org/10.1063/1.53289
https://doi.org/10.1063/1.53289
Publikováno v:
MRS Proceedings. 450
Gai1−xInxASySb1-y (0.06 < x < 0.18, 0.05 < y < 0.14) epilayers were grown lattice-matched to GaSb substrates by low-pressure organometallic vapor phase epitaxy (OMVPE) using triethylgallium, trimethylindium, tertiarybutylarsine, and trimethylantimo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee6e3c03ad1e8073660eff65b2de57be
https://doi.org/10.1557/proc-450-55
https://doi.org/10.1557/proc-450-55
Autor:
D. L. Spears
Publikováno v:
1994 Conference on Lasers and Electro-Optics Europe.
For the past six years, Lincoln Laboratory has been developing mid-infrared diode lasers based upon GaInAsSb/AlGaAsSb heterostructures grown on GaSb substrates by molecular beam epitaxy.1-4 Compactness and efficiency make diode lasers very desirable
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bbdd23bca6b5e92a84fd5c03b83da86
https://doi.org/10.1364/cleo_europe.1994.cfe6
https://doi.org/10.1364/cleo_europe.1994.cfe6
Autor:
D. L. Spears
Publikováno v:
IBM Journal of Research and Development. 13:499-502
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04b821ba895fd433c5c058866ca13c74
https://doi.org/10.1147/rd.135.0499
https://doi.org/10.1147/rd.135.0499
Publikováno v:
Applied Physics Letters. 24:231-233
The absolute frequencies of one 13C16O and seven 12C16O laser lines have been determined with an uncertainty of about ±5 MHz by measuring the beat frequencies between these CO lines and second harmonics of CO2 laser transitions generated in a CdGeAs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66f2addbc723d0423072548c3bdeeeee
https://doi.org/10.1063/1.1655164
https://doi.org/10.1063/1.1655164