Zobrazeno 1 - 10
of 24
pro vyhledávání: '"D. L. Rode"'
Autor:
D. L. Rode
Publikováno v:
Journal of Applied Physics. 76:4173-4183
A physical theory of the bipolar junction transistor which provides closed‐form solutions for current/voltage relations for generalized bias conditions is introduced. Included are the new concepts of emitter and collector collection efficiency. Bot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d9f0433c5915286e08fdde83366dd23
https://doi.org/10.1063/1.357371
https://doi.org/10.1063/1.357371
Publikováno v:
SPIE Proceedings.
Single-mode optical D-fiber is fabricated and coupled to a buried polymer acrylic waveguide by a novel technique with a transcision and alignment ways. The D-fiber is fabricated by lapping the cladding layer of a single-mode fiber to the core. Optica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8760d94bd4135045b574bcb400ea578b
https://doi.org/10.1117/12.212716
https://doi.org/10.1117/12.212716
Publikováno v:
SPIE Proceedings.
We report on the use of di/tri acrylates in a photocurable polymer system for the fabrication of optical channel waveguides. The high degree of cross-linking in these materials improves the stability over linear systems. We have formulated resin mixt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63b9ebc68f56d2d7981ad60e635d9913
https://doi.org/10.1117/12.174509
https://doi.org/10.1117/12.174509
Autor:
D. L. Rode, D. K. Gaskill
Publikováno v:
Journal of Applied Physics. 99:036106
We point out a potentially confusing characterization of an earlier work by Rode and Gaskill [Appl. Phys. Lett. 66, 1972 (1995)] which appeared in a recent paper by Abdel-Motaleb and Korotkov [J. Appl. Phys. 97, 093715 (2005)].
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dce3ea9439481cfeeb4304c826c02b83
https://doi.org/10.1063/1.2170409
https://doi.org/10.1063/1.2170409
Autor:
D. L. Rode, F. J. Rosenbaum
Publikováno v:
Journal of Applied Physics. 70:3973-3974
This reply addresses the issues raised by Rode and Rosenbaum regarding the bipolar junction transistor model developed in the subject paper [J. Appl. Phys. 68, 5911(1990)]. The error associated with Eq. (4) in the subject paper is discussed and corre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d07294c7e4945d0e57da2f550515d9b1
https://doi.org/10.1063/1.349161
https://doi.org/10.1063/1.349161
Autor:
D. L. Rode
Publikováno v:
Journal of Applied Physics. 78:6871-6871
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b62fbd9ff285466ed13cb6c6239dbe35
https://doi.org/10.1063/1.360787
https://doi.org/10.1063/1.360787
Autor:
D. L. Rode, D. K. Gaskill
Publikováno v:
Applied Physics Letters. 67:2418-2418
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f046260db3789635fb61ec1238c31b2a
https://doi.org/10.1063/1.115554
https://doi.org/10.1063/1.115554
Autor:
D. L. Rode
Publikováno v:
Journal of Applied Physics. 45:3887-3891
Maintenance of higher doping levels in the AlxGa1−xAs barrier layers of double‐heterostructure lasers permits one to use smaller molar fractions x, thereby minimizing the lattice mismatch between AlxGa1−xAs and GaAs. We estimate conduction‐ba
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85ff8667729df3907f4d393a51d39ea0
https://doi.org/10.1063/1.1663880
https://doi.org/10.1063/1.1663880
Autor:
D. L. Rode, L. A. Koszi
Publikováno v:
Journal of The Electrochemical Society. 122:1676-1680
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1307701859d783b4b9d92a9952d2ef9
https://doi.org/10.1149/1.2134108
https://doi.org/10.1149/1.2134108
Autor:
D. L. Rode, P. A. Fedders
Publikováno v:
Journal of Applied Physics. 54:6425-6431
Suitability of the Born approximation and the Boltzmann equation is demonstrated for the scattering of free‐carrier electrons by random‐alloy atomic potentials in semiconductor alloys. Composition dependences of alloy‐scattering potential stren
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e8572ce377be277ebaeffa8b52c5afa
https://doi.org/10.1063/1.331921
https://doi.org/10.1063/1.331921