Zobrazeno 1 - 10
of 25
pro vyhledávání: '"D. L. Polla"'
Autor:
Michael Stopa, Semion K. Saikin, D. L. Polla, Roshan L. Aggarwal, L. W. Farrar, Alán Aspuru-Guzik
Publikováno v:
Solid State Communications. 151:553-556
The absolute Raman cross section σ R S of the first-order 519 cm−1 optical phonon in silicon was measured using a small temperature-controlled blackbody for the signal calibration of the Raman system. Measurements were made with a 25-mil thick (00
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7800baec10c8c555e136841b5c3e6207
https://doi.org/10.1016/j.ssc.2011.01.011
https://doi.org/10.1016/j.ssc.2011.01.011
Publikováno v:
Journal of Raman Spectroscopy. 42:461-464
The absolute Raman scattering cross sections (σRS) for the 471, 217, and 153 cm−1 modes of sulfur were measured as 6.0 ± 1.2 × 10−27, 7.7 ± 1.6 × 10−27, and 1.2 ± 0.24 × 10−26 cm2 at 815, 799, and 794 nm, respectively, using a 785-nm p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8aeea24b425167974e65b21668792b74
https://doi.org/10.1002/jrs.2703
https://doi.org/10.1002/jrs.2703
Publikováno v:
Solid State Communications. 149:1330-1332
Absolute first-order Stokes Raman cross sections ( σ R ) of the longitudinal optical (LO) phonons of room-temperature GaP at 811 nm (1.53 eV) and 1112 nm (1.12 eV) have been measured, using pump/excitation wavelengths of 785 (1.58 eV) and 1064 nm (1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::329898b9d4948ae83042bc2a66210cd4
https://doi.org/10.1016/j.ssc.2009.05.033
https://doi.org/10.1016/j.ssc.2009.05.033
Publikováno v:
Journal of Raman Spectroscopy. 40:1331-1333
The absolute Raman scattering cross section (σRS) for the 1584-cm−1 band of benzenethiol at 897 nm (1.383 eV) has been measured to be 8.9 ± 1.8 × 10−30 cm2 using a 785-nm pump laser. A temperature-controlled, small-cavity blackbody source was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b60064cb27a254d123dd937dfd8c747
https://doi.org/10.1002/jrs.2396
https://doi.org/10.1002/jrs.2396
Publikováno v:
Journal of Materials Science: Materials in Electronics. 9:465-471
RuO2/Ru conducting films were deposited on low stress Si3N4/Si substrates by reactive r.f. sputtering deposition at a substrate temperature of 400°C to introduce a new bottom electrode for microelectromechanical system devices based on a Pb(Zr1-xTix
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a12d644220bf6e9a3aaf503135f0729
https://doi.org/10.1023/a:1008910326521
https://doi.org/10.1023/a:1008910326521
Publikováno v:
Integrated Ferroelectrics. 3:21-32
Ferroelectric thin films have been integrated with silicon micromechanical structures in the fabrication of microsensor and microactuator structures. Both the piezoelectric and pyroelectric effects in thin films of lead zirconate titanate (Pb(ZrxTi1_
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f4ed5a4fe9f8920cbae15377b7aaa3d
https://doi.org/10.1080/10584589308216697
https://doi.org/10.1080/10584589308216697
Publikováno v:
AIP Conference Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c69e0acd72b538d34e4f84e3c5a90ac0
https://doi.org/10.1063/1.3482443
https://doi.org/10.1063/1.3482443
Autor:
D. L. Polla
Publikováno v:
2010 IEEE International Conference on Management of Innovation & Technology.
MEMS and nanotechnology have become significant new technologies in just the past 15 years. The Defense Advanced Research Projects Agency (DARPA) has provided key research and development funding for both academic and industrial laboratories that has
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c90275843363f94eb113d20b0289ccad
https://doi.org/10.1109/icmit.2010.5492848
https://doi.org/10.1109/icmit.2010.5492848
Publikováno v:
Physics of Narrow Gap Semiconductors ISBN: 9783540111917
A contactless optical technique for measuring carrier lifetimes and defect levels in Hg0.7Cd0.3Te is presented. The technique is based on measuring the modulation of the absorption of a probe beam with E Eg. Initial data on near intrinsic and p-type
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f887d1e4be31fa6852e97d725d475e5
https://doi.org/10.1007/3-540-11191-3_23
https://doi.org/10.1007/3-540-11191-3_23
Publikováno v:
Applied Physics Letters. 64:2670-2672
Deep level transient spectroscopy (DLTS) has been used to investigate trap levels in sol‐gel derived polycrystalline Pb(Zr0.54,Ti0.46)O3 thin films. Metal‐ferroelectric‐metal capacitor structures 2400 and 3000 A in thickness were fabricated and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::855b95ae5b14faa6b7e4961a7c9f444b
https://doi.org/10.1063/1.111487
https://doi.org/10.1063/1.111487