Zobrazeno 1 - 8
of 8
pro vyhledávání: '"D. L. PULFREY"'
Autor:
L C Castro, D L Pulfrey
Publikováno v:
Nanotechnology. 17:300-304
Compact expressions are derived for the maximum operating frequency of carbon nanotube field-effect transistors. The expressions are shown to be applicable over wide ranges of physical properties, parasitic resistances, and gate biases. The utility o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b852f94d2c980ec27891c2c7461a5054
https://doi.org/10.1088/0957-4484/17/1/051
https://doi.org/10.1088/0957-4484/17/1/051
Autor:
D. L. Pulfrey
Publikováno v:
Wiley Encyclopedia of Electrical and Electronics Engineering
The sections in this article are 1 Advantages of the HBT Over the BJT 2 Fabrication and Performance of HBTS 3 Modeling 4 Applications 5 Acknowledgment
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41a90d67ca8a3c48f5b3c88b85a723f7
https://doi.org/10.1002/047134608x.w3132
https://doi.org/10.1002/047134608x.w3132
Autor:
D L McGuire, D L Pulfrey
Publikováno v:
Nanotechnology; Dec2006, Vol. 17 Issue 23, p5805-5811, 7p
Autor:
N. G. Tarr, D. L. Pulfrey
Publikováno v:
Applied Physics Letters. 34:295-297
Measurements of short‐circuit density Jsc and open‐circuit photovoltage Voc have been made over a range of illumination levels at various temperatures for Al‐SiOx‐pSi MIS photodiodes. It is found that at high illumination levels the data sati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3dc3c8e900f9f2cbec764838bc8e5fb
https://doi.org/10.1063/1.90765
https://doi.org/10.1063/1.90765
Publikováno v:
Chemischer Informationsdienst. 5
The anodization of Si in a 1 MHz oxygen plasma is described. In‐situ film thickness measurements were made using a single angle "s" light reflectance technique and this data, coupled with information on the variation of sample voltage with thicknes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46d6e2ad6b6443dd7383e2075afdc300
https://doi.org/10.1002/chin.197405048
https://doi.org/10.1002/chin.197405048
Publikováno v:
Journal of The Electrochemical Society. 120:1529
The anodization of Si in a 1 MHz oxygen plasma is described. In‐situ film thickness measurements were made using a single angle "s" light reflectance technique and this data, coupled with information on the variation of sample voltage with thicknes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6b78d6924b3a5bbd0277c013d86e132
https://doi.org/10.1149/1.2403297
https://doi.org/10.1149/1.2403297
Publikováno v:
Nanotechnology; Jan2010, Vol. 21 Issue 1, p015202-015202, 1p