Zobrazeno 1 - 10
of 10
pro vyhledávání: '"D. L. HARAME"'
Autor:
Renata Camillo-Castillo, James W. Adkisson, Pekarik John J, Q.Z. Liu, Peter B. Gray, D. L. Harame, Ramana M. Malladi, Marwan H. Khater, Vibhor Jain
Publikováno v:
ECS Transactions. 64:53-63
Scaling silicon germanium heterojunction bipolar transistors (SiGe HBTs) to attain simultaneous increases in the figures of merit, fT and fMAX has necessitated a deep understanding of the inherent features of the process as it relates to the final de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50662bb20e24fdce784e90a6e34b7736
https://doi.org/10.1149/06406.0053ecst
https://doi.org/10.1149/06406.0053ecst
Autor:
Renata Camillo-Castillo, Bjorn Zetterlund, Pekarik John J, Vibhor Jain, Peter B. Gray, Marwan H. Khater, Adam W. Divergilio, Michael L. Kerbaugh, Q.Z. Liu, James W. Adkisson, D. L. Harame
Publikováno v:
ECS Transactions. 64:285-294
Development of SiGe HBTs in BiCMOS technology with both high f T and f MAX faces significant challenges. To increase f T, thinning the base and collector thickness is generally the first step to reduce the carrier transit times, but this increases th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::69b02641f1b8b2ba7829dd48493610e9
https://doi.org/10.1149/06406.0285ecst
https://doi.org/10.1149/06406.0285ecst
Autor:
James Kolodzey, Ramsey Hazbun, James Nakos, Dean Siegel, John Hart, D. L. Harame, Christopher J. Funch
Publikováno v:
ECS Transactions. 64:659-667
The Ge content in SiGe bipolar transistors (HBTs) has been steadily increasing for the past few decades in order to meet higher frequency targets. Problems exist with higher Ge content films due to the strain from the pseudomorphic growth on Si subst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bf20747e05ed1722621cf02a7e2d5c42
https://doi.org/10.1149/06406.0659ecst
https://doi.org/10.1149/06406.0659ecst
Autor:
Andreas D. Stricker, D. L. Harame, Renata Camillo-Castillo, Jeffrey B. Johnson, Alvin J. Joseph, Aravind Appaswarmy, Ramana M. Malladi
Publikováno v:
ECS Transactions. 33:319-329
Technology computer-aided design (TCAD) feasibility studies for for scaling a SiGe-based NPN with cutoff frequencies, fT/fMAX of 200/250GHz were conducted, in which the critical process and device design components were self-consistently addressed. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1b488dff0dd86aa9258fb77e87e6c94
https://doi.org/10.1149/1.3487562
https://doi.org/10.1149/1.3487562
Autor:
James E. Dunn, Thomas Kessler, Peter B. Gray, R. Camillo-Castillo, D. L. Harame, Peng Cheng, Jeffrey P. Gambino, Vibhor Jain, Pekarik John J, Panglijen Candra
Publikováno v:
2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC).
A manufacturable 130nm SiGe BiCMOS RF technology for high-performance mm-wave analog applications having a high-speed SiGe Heterojunction Bipolar Transistor (HBT) integrated into a full-featured RFCMOS is presented. The technology features a high per
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::377181f23e88d0025df112ae9d753f8a
https://doi.org/10.1109/rfic.2013.6569610
https://doi.org/10.1109/rfic.2013.6569610
Publikováno v:
ISSCC
This paper describes a 10Gb/s, digitally-controlled distributed amplifier (DA) implemented in 0.18μm SiGe (60GHz peak-fT) with 6Vpp differential output swing, 10dB return loss across 30GHz bandwidth; performance suitable for driving a dual (i.e., ba
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c2897c45b84371a9e6a65bb4b877ce8
https://doi.org/10.1109/isscc.2013.6487669
https://doi.org/10.1109/isscc.2013.6487669
Autor:
Gregory G. Freeman, Bradley A. Orner, S. Subbanna, Basanth Jagannathan, Robert A. Groves, Douglas D. Coolbaugh, Peter J. Geiss, J. Malinowski, S. St Onge, J. Jeng, M. Gordon, K. Stein, D. L. Harame, Douglas B. Hershberger, David C. Ahlgren, S. Kilpatrick, J. Dunn, Peter B. Gray, L. Lanzerotti, R. Johnson, Kathryn T. Schonenberg, Michael J. Zierak, Natalie B. Feilchenfeld, Alvin J. Joseph
Publikováno v:
Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024).
A new base-after-gate integration scheme has been developed to integrate a 47 GHz f/sub t/, 65 GHz F/sub max/SiGe HBT process with a 0.24 /spl mu/m CMOS technology having 0.18 /spl mu/m L/sub eff/ and 5 nm gate oxide. We discuss the benefits and chal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8abbecd624f03e242f5f04f857d6217b
https://doi.org/10.1109/bipol.1999.803539
https://doi.org/10.1109/bipol.1999.803539
Autor:
J. Dunn, Steven H. Voldman, Gregory G. Freeman, K. Watson, Alvin J. Joseph, S. Subbanna, R. Johnson, David C. Ahlgren, D. L. Harame, S. St Onge, Natalie B. Feilchenfeld
Publikováno v:
2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059).
A base-after-gate integration scheme has been developed fora 0.25 /spl mu/m SiGe BiCMOS and the details of the approach are discussed. NPN device reliability is reviewed for high-frequency transistors. The reliability aspects associated with using Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ded687dd9a80dd507b18e5dd56ef13a8
https://doi.org/10.1109/relphy.2000.843921
https://doi.org/10.1109/relphy.2000.843921
Autor:
Renata A. Camillo-Castillo, Qizhi Z. Liu, Vibhor Jain, James W. Adkisson, Marwan H. Khater, Peter Gray, John Jack Pekarik, R Malladi, D. L. Harame
Publikováno v:
ECS Meeting Abstracts. :1764-1764
Scaling silicon germanium heterojunction bipolar transistors (SiGe HBTs) to attain simultaneous increases in the figures of merit, fT and fMAX has necessitated a deep understanding of the inherent features of the process as it relates to the final de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab6d0184639e92b039b4a4e2f6cea01e
https://doi.org/10.1149/ma2014-02/35/1764
https://doi.org/10.1149/ma2014-02/35/1764
