Výsledky vyhledávání - "D. L. GOROSHKO"

Multilayer Heterostructures with Embedded CrSi2 and β-FeSi2 Nanocrystals on Si(111) Substrate: From the Formation to Photoelectric Properties

Autor: Evgeniy Y. Subbotin, Konstantin N. Galkin, D. L. Goroshko, Evgeniy Anatoljevich Chusovotin, Nikolay G. Galkin

Publikováno v: Solid State Phenomena. 312:45-53

The studies are devoted to the development of the technology of multilayer incorporation of nanocrystals (NCs) of semiconductor chromium and iron disilicides with a layer density no less than 2x1010 cm-2, the establishment of the growth mechanism of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::93fa53e4f951bc488b43ef126e7668ce
https://doi.org/10.4028/www.scientific.net/ssp.312.45

Zobrazit plný text záznamu

Transport Properties of CaSi2 and Ca2Si Thin Films

Autor: L. Dermenji, Ernest Arushanov, D. L. Goroshko, E.A. Chusovitin, Nikolay G. Galkin, K. G. Lisunov, Konstantin N. Galkin

Publikováno v: Solid State Phenomena. 312:3-8

Resistivity, r (T), and Hall coefficient in weak (B < 1 T) magnetic fields, R (T), are investigated in Ca2Si and CaSi2 films at temperatures T between ~ 20 - 300 K. In CaSi2, r (T) is typical of metals increasing with T within the whole temperature r

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::24c31a08dcede4dc91e97eedc20083d2
https://doi.org/10.4028/www.scientific.net/ssp.312.3

Zobrazit plný text záznamu

Influence of the temperature and substrate modification on the formation of continuous GaSb film on Si(111) by solid phase epitaxy

Autor: S. V. Chusovitina, E. Y. Subbotin, E. A. Chusovitin, D. L. Goroshko, S. A. Dotsenko, S. A. Pyachin, A. V. Gerasimenko, A. K. Gutakovskii

Publikováno v: Japanese Journal of Applied Physics. 62:SD1005

The solid-state formation of gallium antimonide on Si(111) from a stoichiometric mixture of GaSb in the temperature range of 300 °C–500 °C and thicknesses of 12–40 nm was studied under ultrahigh vacuum conditions. The influence of the preformed

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b716e235ef5b736f2ed3a555e777c7a2
https://doi.org/10.35848/1347-4065/aca4d8

Zobrazit plný text záznamu

An Influence of the Si(111)3-4o Vicinal Surface on the Solid Phase Epitaxy of α-FeSi2 Nanorods and their Crystal Parameters

Autor: Nikolay G. Galkin, Anton K. Gutakovskii, D. L. Goroshko, S.A. Dotsenko, Konstantin N. Galkin, E.A. Chusovitin

Publikováno v: Key Engineering Materials. 806:30-35

The morphology and structure of iron silicide nanorods formed on Si (111) vicinal surface by the SPE method at T = 630 °C were studied. Optimal Fe coverage and Fe deposition rate for the formation of a dense array of the nanorods (54-65% of the subs

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::570b316c8617c0ccbc2714b1a29e513e
https://doi.org/10.4028/www.scientific.net/kem.806.30

Zobrazit plný text záznamu

Conductive CaSi2 transparent in the near infra-red range

Autor: Andrey B. Filonov, E. A. Chusovitin, Vlodislav O. Bogorodz, D. L. Goroshko, Béla Pécz, Konstantin N. Galkin, Ildikó Cora, A. M. Maslov, Andrei V. Tupkalo, Sergey A. Dotsenko, Victor E. Borisenko, Nikolay G. Galkin, Evgenii Y. Subbotin, Dmitrii B. Migas

Publikováno v: Journal of Alloys and Compounds. 770:710-720

The methods of heteroepitaxial growth of Si/CaSi2/Si(111) double heterostructures (DHS) at 500 °C have been developed. Thin CaSi2 layers with the thicknesses of 14–40 nm have been successfully embedded in the silicon matrix. The hR6-CaSi2(001)||Si

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6dfe414141aceb9ebf830b10eece8b45
https://doi.org/10.1016/j.jallcom.2018.08.179

Zobrazit plný text záznamu

Inhibitory Effects of Carrageenans on Endotoxin-Induced Inflammation

Autor: E.A. Chusovitin, D. L. Goroshko, Irina M. Yermak, A.V. Volod’ko, Victor V Maleev, Eleonora I. Khasina, Tamara F. Solov'eva, Anna O. Kravchenko, V. N. Davydova

Publikováno v: Marine Drugs
Volume 18
Issue 5
Marine Drugs, Vol 18, Iss 248, p 248 (2020)

The inhibitory effects of carrageenans (CRGs) on lipopolysaccharide (LPS) induced inflammation in a mouse model of endotoxemia and in complex therapy of patients with enteric infections of Salmonella etiology were studied. The atomic force microscopy

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d71475bce04748490cfb569332bf606a
http://europepmc.org/articles/PMC7281451

Zobrazit plný text záznamu

Comparison of the Structural, Optical and Thermoelectrical Properties of Ca Silicide Films with Variable Composition on Si Substrates

Autor: Igor M. Chernev, E.A. Chusovitin, A.A. Usenko, Vladimir Khovaylo, D. L. Goroshko, Konstantin N. Galkin, Nikolay G. Galkin, Alexander V. Shevlyagin

Publikováno v: Defect and Diffusion Forum. 386:3-8

The growth, structure, optical, electrical and thermoelectric properties of calcium silicides of various compositions on silicon substrates with (100) and (111) orientations were experimentally studied. It was found that when the atoms of Ca and Si a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::44473b1ca37f17fdc031d99b13005219
https://doi.org/10.4028/www.scientific.net/ddf.386.3

Zobrazit plný text záznamu

Thermoelectric Properties of Nanostructured Material Based on Si and GaSb

Autor: E.A. Chusovitin, Sergey A. Dotsenko, Konstantin N. Galkin, Evgeniy Y. Subbotin, Anton K. Gutakovskii, D. L. Goroshko, Vladimir U. Nazarov, Semeyon A. Balagan, Nikolay G. Galkin, A.A. Usenko, Vladimir Khovaylo

Publikováno v: Defect and Diffusion Forum. 386:102-109

Successively forming GaSb islands by solid-phase epitaxy and covering them with a silicon layer, a nanostructured material containing 4 layers of GaSb nanocrystals (NCs) was grown on Si (111) surface. Due to a small size of the NCs (average height ~

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::00323a5e29cd45adff7b081ee865895f
https://doi.org/10.4028/www.scientific.net/ddf.386.102

Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání