Zobrazeno 1 - 10
of 10
pro vyhledávání: '"D. L. Dreifus"'
Autor:
D. L. Dreifus, K. Miyata
Publikováno v:
Journal of Applied Physics. 73:4448-4456
The electrical properties of metal/intrinsic semiconductor/semiconductor junctions formed by Al, undoped polycrystalline diamond, and B‐doped p‐type polycrystalline diamond films were investigated. These results are compared with those of standar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e77797b23d05bd305548c394dee09c74
https://doi.org/10.1063/1.352783
https://doi.org/10.1063/1.352783
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 8:1221-1225
The first demonstration of Hg1−xCdxTe metal–insulator‐semiconductor field‐effect transistors prepared using n‐type layers grown by photoassisted molecular beam epitaxy is reported. These transistor structures were processed by means of a ne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5e39ecd2dab32ba5b8af7939af88fa9
https://doi.org/10.1116/1.576949
https://doi.org/10.1116/1.576949
Publikováno v:
Applied Physics Letters. 57:1901-1903
We report the successful fabrication of ZnSe p‐n junction light‐emitting diodes in which Li and Cl are used as p‐type and n‐type dopants, respectively.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a088e904c008ac6e0f0859dcb17b4eb
https://doi.org/10.1063/1.104006
https://doi.org/10.1063/1.104006
Publikováno v:
Applied Physics Letters. 57:1663-1665
We report the first demonstration of ZnSe metal‐semiconductor field‐effect transistors. These new devices were fabricated from n‐type Cl‐doped epitaxial ZnSe layers grown by molecular beam epitaxy on (100) oriented semi‐insulating Cr‐dope
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::447a44a16a4adfefc1b22745a52130e6
https://doi.org/10.1063/1.104079
https://doi.org/10.1063/1.104079
Publikováno v:
Journal of Materials Science: Materials in Electronics. 6
For the first time, a theoretical model for polycrystalline diamond (PCD) field effect transistors is proposed. The model is accompanied by an investigation of the single crystalline diamond (SCD) FET for the verification of material parameters emplo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3cf7dcbb029b59fc71ef9c5b0000aff7
https://doi.org/10.1007/bf00188194
https://doi.org/10.1007/bf00188194
Publikováno v:
Applied Physics Letters. 54:170-172
We report the successful p‐type doping of CdTe films with arsenic using the photoassisted molecular beam epitaxy growth technique. These doped epilayers were grown at substrate temperatures as low as 180 °C. The room‐temperature hole concentrati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::534a1ac7618ac7be155f4d1a61968535
https://doi.org/10.1063/1.101219
https://doi.org/10.1063/1.101219
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 6:2722-2724
Interest in CdTe field effect transistors and multigated devices stems from the fact that CdTe is lattice matched to HgCdTe. As a consequence, it may be possible to develop a monolithic technology that combines HgCdTe infrared focal plane arrays with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa0f4f0a51620ee3b588d30075a0105a
https://doi.org/10.1116/1.575493
https://doi.org/10.1116/1.575493
Autor:
N. Hamaguchi, P. Russell, T. P. Humphreys, D. L. Dreifus, C. D. Lamp, A. A. Tuttle, Nadia A. El-Masry, Salah M. Bedair, Y. Lo
Publikováno v:
Applied Physics Letters. 49:942-944
Several superlattice structures, grown by molecular beam epitaxy, have been used to reduce the density of threading dislocations originating from the GaAs substrate. Results clearly indicate that compared to epitaxial layers grown directly on GaAs su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83db64f2e3ef68779efef276a215d211
https://doi.org/10.1063/1.97631
https://doi.org/10.1063/1.97631
Publikováno v:
Applied Physics Letters. 53:1279-1281
We report the first demonstration of electronic devices, Schottky diodes, and metal‐semiconductor field‐effect transistors, in a diluted magnetic semiconductor Cd1−xMnxTe. These devices were fabricated using n‐type, indium‐doped CdMnTe film
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c86cf298da196d29a94de4bb939e923
https://doi.org/10.1063/1.99997
https://doi.org/10.1063/1.99997
Publikováno v:
Applied Physics Letters. 51:931-933
We report the first demonstration of CdTe metal‐semiconductor field‐effect transistors. These transistors were fabricated using n‐type CdTe films grown by photoassisted molecular beam epitaxy. Using this new film deposition technique, it is pos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::803b02e4b7044348787178357e364e08
https://doi.org/10.1063/1.98805
https://doi.org/10.1063/1.98805