Výsledky vyhledávání - "D. L. Baidakov"

Electroconductivity and Electrode Properties of Amorphous PbS–Ag2S–As2S3 and PbS–AgI–As2S3 Films Deposited from Solutions of Glass in n-Butylamine

Autor: D. L. Baidakov, E. V. Shkol’nikov

Publikováno v: Glass Physics and Chemistry. 45:349-354

The parameters of the specific electroconductivity and electrode properties of massive glass and amorphous films of PbS–AgI–As2S3 and PbS–Ag2S–As2S3 are studied. It is established that the lower detection limit of Pb2+ cations is 10–7 mol/L

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8ba945e4d88812da72e9a49ec88b38d2
https://doi.org/10.1134/s1087659619050031

Zobrazit plný text záznamu

Synthesis and properties of multicomponent copper-containing chalcogenide films prepared by the method of deposition from solution

Autor: D. L. Baidakov

Publikováno v: Glass Physics and Chemistry. 40:428-435

Multicomponent copper-containing chalcogenide CuI-AsI3-As2Se3 and CuI-SbI3-As2Se3 films have been prepared by the method of deposition from solutions of chalcogenide glasses in n-butylamine and electrical conductivity of films has been studied. The l

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7852cb20af01c77c4064bbc9d229e0d0
https://doi.org/10.1134/s1087659614040026

Zobrazit plný text záznamu

Electrical conduction of chalcogenide CuI-AgI-As2Se3 and PbI2-AgI-As2Se3 films obtained by the chemical deposition method

Autor: D. L. Baidakov

Publikováno v: Glass Physics and Chemistry. 39:634-638

The electrical conduction of chalcogenide semiconductor CuI-AgI-As2Se3 and PbI2-AgI-As2Se3 films obtained by the chemical deposition from n-butylamine, depending on the composition of films, has been studied. It has been shown that the electrical pro

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6baec77cb630b13935fc41640153db0e
https://doi.org/10.1134/s1087659613060023

Zobrazit plný text záznamu

Synthesis, electrical properties, and structural features of copper-containing chalcogenide films produced by the chemical deposition method

Autor: D. L. Baidakov

Publikováno v: Russian Journal of Applied Chemistry. 86:1351-1358

Multicomponent copper-containing CuI-AsI3-As2Se3 and CuI-Sb3I-As2Se3 chalcogenide films were produced by chemical deposition from solutions of chalcogenide glasses in n-butylamine and their electrical conductivity was studied. It was shown that the e

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c9f43fa756120dc36b5198759add685b
https://doi.org/10.1134/s1070427213090060

Zobrazit plný text záznamu

Nuclear γ-resonance spectra and local surrounding of 121Sb and 129I atoms in CuI-PbI2-As2Se3 and CuI-SbI3-PbI2-As2Se3 films

Autor: E. V. Shkol’nikov, V. A. Ryseva, D. L. Baidakov

Publikováno v: Glass Physics and Chemistry. 39:235-239

The local surrounding of copper, antimony, and iodine atoms in multicomponent chalcogenide films CuI-PbI2-As2Se3 and CuI-SbI3-PbI2-As2Se3 deposited from solutions of chalcogenide glass in n-butylamine has been studied by the Mossbauer spectroscopy me

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d5e21140fcce9eb81866c90810afe405
https://doi.org/10.1134/s1087659613030036

Zobrazit plný text záznamu

Electrical conductivity of CuI-AsI3-As2Se3 and CuI-SbI3-As2Se3 chalcogenide films prepared by chemical deposition

Autor: D. L. Baidakov, E. V. Shkol’nikov, V. A. Ryseva

Publikováno v: Glass Physics and Chemistry. 36:561-565

The electrical conductivity of chalcogenide semiconductor films in the CuI-AsI3-As2Se3 and CuI-SbI3-As2Se3 systems, which have been prepared by chemical deposition from mono-n-butylamine, has been studied as a function of the temperature and film com

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4ae80bcd18eaf38b2c6e33c0015c12b1
https://doi.org/10.1134/s1087659610050032

Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání