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pro vyhledávání: '"D. L. Alliman"'
Autor:
D. L. Alliman, Brendan P. Gunning, J. M. Kempisty, K. Ikenaga, A. Mishima, J. R. Creighton, Jeffrey J. Figiel, Daniel D. Koleske
Publikováno v:
Applied Physics Letters. 110:232102
Using metalorganic vapor phase epitaxy, methods were developed to achieve AlN films on sapphire with low etch pit density (EPD). Key to this achievement was using the same AlN growth recipe and only varying the pre-growth conditioning of the quartz-w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3e07fea127373bd663f2ee22825b7ca
https://doi.org/10.1063/1.4984900
https://doi.org/10.1063/1.4984900
