Zobrazeno 1 - 10
of 27
pro vyhledávání: '"D. L. Alfimova"'
Autor:
L. S. Lunin, M. L. Lunina, D. L. Alfimova, A. S. Pashchenko, O. S. Pashchenko, A. V. Donskaya
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 17:419-425
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca443f2cdbe5dd17a2884731ae648d4c
https://doi.org/10.1134/s1027451023020301
https://doi.org/10.1134/s1027451023020301
Autor:
L. S. Lunin, M. L. Lunina, D. L. Alfimova, A. S. Pashchenko, N. A. Yakovenko, O. S. Pashchenko
Publikováno v:
Technical Physics Letters. 48:82-85
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d8461f68d5884882f5cb088bbb6fc06
https://doi.org/10.1134/s1063785022030087
https://doi.org/10.1134/s1063785022030087
Autor:
D. L. Alfimova, M. L. Lunina, L. S. Lunin, A. S. Pashchenko, O. S. Pashchenko, M. S. Stolyarov
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 15:1290-1295
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68fd5c288c3b64850c11607b2ad3d4c5
https://doi.org/10.1134/s1027451021060276
https://doi.org/10.1134/s1027451021060276
Publikováno v:
Technical Physics Letters. 46:979-982
Isoperiodic GaxIn1 – xSbyAszP1 – y – z/InP heterostructures for the operation at a wavelength of 1.06–1.60 μm are obtained using the method of zone crystallization with a temperature gradient. An absolute spectral sensitivity of about 0.59 A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f91ceeacfb1555d9ad94454d586a6dc5
https://doi.org/10.1134/s1063785020100077
https://doi.org/10.1134/s1063785020100077
Autor:
A. S. Pashchenko, L. S. Lunin, D. L. Alfimova, O. S. Pashchenko, M. L. Lunina, A. N. Yatsenko
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 14:771-776
The effect of bismuth on the structural perfection of elastically strained AlGaInSbBi epitaxial layers grown on InSb substrates in a temperature gradient field is studied. The optimal parameters of the growth process of AlGaInSbBi(InSb) epitaxial lay
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1aa0f8e51cf4b4646f046a671b1647a7
https://doi.org/10.1134/s1027451020040217
https://doi.org/10.1134/s1027451020040217
Publikováno v:
Semiconductors. 54:759-764
The growth of AlGaInSbAs solid solutions on InAs substrates from the liquid phase in a temperature-gradient field is discussed. The calculation of parameters is performed, and the luminescence properties and spectral characteristics of AlGaInSbAs sol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa503f9a28788a95f72d56d2385d286b
https://doi.org/10.1134/s1063782620070088
https://doi.org/10.1134/s1063782620070088
Publikováno v:
Physics of the Solid State. 62:597-602
The specific features of phase transitions in elastostressed Al–Ga–In–Sb–Bi heterosystems and In–Sb–Bi and Al–In–Bi subsystems are discussed. The isotherms of this heterosystem and its subsystems are studied in the temperature range 6
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f99b7e9d0eea16c0df8b1f9d29ea5e81
https://doi.org/10.1134/s1063783420040022
https://doi.org/10.1134/s1063783420040022
Publikováno v:
Semiconductors. 53:1088-1091
The results of growing elastically stressed AlGaInAsP〈Bi〉 thin epitaxial layers from the liquid phase on indium phosphide substrates in a temperature-gradient field are discussed. The effect of bismuth on the structural perfection, the luminescen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d23ca449a0dd0308eeb579dab33a2d1
https://doi.org/10.1134/s1063782619080141
https://doi.org/10.1134/s1063782619080141
Publikováno v:
Technical Physics Letters. 45:823-826
Isoparametric heterostructures GaxIn1 –xAsyBizSb1 –y–z/InSb for photodetectors operating in a 6- to 12-μm wavelength interval have been manufactured by the method of floating-zone recrystallization with temperature gradient. The introduction o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9423d83fd9874033e811fb69da7f1963
https://doi.org/10.1134/s1063785019080285
https://doi.org/10.1134/s1063785019080285
Publikováno v:
Semiconductors. 53:887-891
The effect of growth conditions on the structural perfection of AlInGaAsP/InP thin-film heterostructures is discussed. The key parameters determining the structural perfection and surface quality of thin AlInGaAsP epitaxial films grown on indium-phos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb8b3bb32138bc6d8b73548878f3f2c0
https://doi.org/10.1134/s1063782619070029
https://doi.org/10.1134/s1063782619070029