Zobrazeno 1 - 10
of 1 182
pro vyhledávání: '"D. Koehler"'
Publikováno v:
BMC Family Practice, Vol 19, Iss 1, Pp 1-13 (2018)
Abstract Background Patient safety incidents (PSIs) frequently occur in primary care and are often considered to be preventable. Better knowledge of factors contributing to PSIs is required to build safer care. The aim of this work was to describe th
Externí odkaz:
https://doaj.org/article/a74c2d90880546c9b129a619bca52ccb
Autor:
Nadine G. Reitman, Richard W. Briggs, William D. Barnhart, Alexandra E. Hatem, Jessica A. Thompson Jobe, Christopher B. DuRoss, Ryan D. Gold, John D. Mejstrik, Camille Collett, Rich D. Koehler, Sinan Akçiz
Publikováno v:
The Seismic Record, Vol 3, Iss 4, Pp 289-298 (2023)
The 6 February 2023 Kahramanmaraş, Turkey (Türkiye), earthquake sequence produced > 500 km of surface rupture primarily on the left-lateral East Anatolian (~345 km) and Çardak (~175 km) faults. Constraining the length and magnitude of surface disp
Externí odkaz:
https://doaj.org/article/a5f408610d244739be03f576546250fb
Autor:
Tolen Nelson, Daniel G. Georgiev, Michael R. Hontz, Raghav Khanna, Adrian Ildefonso, Andrew D. Koehler, Karl Hobart, Ani Khachatrian, Dale McMorrow
Publikováno v:
IEEE Transactions on Nuclear Science. 70:328-335
Autor:
Tolen Nelson, Prakash Pandey, Daniel G. Georgiev, Michael R. Hontz, Andrew D. Koehler, Karl D. Hobart, Travis J. Anderson, Adrian Ildefonso, Raghav Khanna
Publikováno v:
IEEE Transactions on Electron Devices. 69:6940-6947
Autor:
Marko J. Tadjer, Peter E. Raad, Pavel L. Komarov, Karl D. Hobart, Tatyana I. Feygelson, Andrew D. Koehler, Travis J. Anderson, Anindya Nath, Bradford Pate, Fritz J. Kub
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 922-930 (2018)
A novel wet etch process for fabrication of large-area AlGaN/GaN membranes is reported, along with an evaluation of membrane-high electron mobility transistor (HEMT) electrothermal performance up to 1.9 W/mm. Hall measurements showed negligible post-
Externí odkaz:
https://doaj.org/article/966cd82acf0a405d973ec34e45297cfa
Autor:
Prakash Pandey, Tolen M. Nelson, William M. Collings, Michael R. Hontz, Daniel G. Georgiev, Andrew D. Koehler, Travis J. Anderson, James C. Gallagher, Geoffrey M. Foster, Alan Jacobs, Mona A. Ebrish, Brendan P. Gunning, Robert J. Kaplar, Karl D. Hobart, Raghav Khanna
Publikováno v:
IEEE Transactions on Electron Devices. 69:5096-5103
Autor:
Andréa D. Koehler, Mônica L. Rossi, Vera T. C. Carneiro, Glaucia B. Cabral, Adriana P. Martinelli, Diva M. A. Dusi
Publikováno v:
Repositório Institucional da USP (Biblioteca Digital da Produção Intelectual)
Universidade de São Paulo (USP)
instacron:USP
Universidade de São Paulo (USP)
instacron:USP
Autor:
Marko J. Tadjer, Patrick Waltereit, Lutz Kirste, Stefan Müller, James Spencer Lundh, Alan G. Jacobs, Andrew D. Koehler, Pavel Komarov, Peter Raad, John Gaskins, Patrick Hopkins, Vlad Odnoblyudov, Cem Basceri, Travis J. Anderson, Karl D. Hobart
Publikováno v:
physica status solidi (a).
Autor:
Sadab Mahmud, Prakash Pandey, Samuel K. Atwimah, Tolen Nelson, Daniel G. Georgiev, Andrew D. Koehler, Travis J. Anderson, James C. Gallagher, Karl D. Hobart, Raghav Khanna
Publikováno v:
2023 IEEE Applied Power Electronics Conference and Exposition (APEC).
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.