Zobrazeno 1 - 7
of 7
pro vyhledávání: '"D. Klopfel"'
Autor:
S. B. Utter, J. Tschischgale, H. Schulte-Schrepping, E Förster, D. Klopfel, Gregory V. Brown, Peter Beiersdorfer
Publikováno v:
Canadian Journal of Physics. 80:867-874
The wavelengths of the 1s1/22p1/2 and 1s1/22p3/2 Lyman-α transitions have been measured in hydrogenic silicon with an accuracy of 70 ppm. The measurement was carried out with an electron-beam ion trap with a calibrated double-faced monolithic cr
Autor:
G. Hölzer, J. R. Crespo López-Urrutia, Eckhart Förster, D. Klopfel, Klaus Widmann, Gregory V. Brown, P. Beiersdorfer
Publikováno v:
Physical Review A. 57:945-948
The wavelengths of the 1s{sub 1/2}-2p{sub 1/2} and 1s{sub 1/2}-2p{sub 3/2} Lyman-{alpha} transitions have been measured in hydrogenic Mg{sup 11+} with an accuracy as high as 24 ppm. The measurement was carried out on an electron-beam ion trap and uti
Publikováno v:
Review of Scientific Instruments. 68:3669-3675
We have constructed a quasimonolithic crystal consisting of two offset, parallel-mounted quartz (1010) crystals for determining the wavelengths of x-ray transitions on an absolute scale without the need for reference lines. The design and organizatio
Autor:
D. Klopfel, Uwe Stamm, P. Kohler, S. Gotze, Guido Schriever, J. Ringling, Kai Dr. Gäbel, V. Korobotchko, F. Flohrer, Jürgen Dr. Kleinschmidt, I. Ahmad
Publikováno v:
Summaries of Papers Presented at the Lasers and Electro-Optics. CLEO '02. Technical Diges.
Summary form only given. Extending deep ultraviolet micro-lithography into the extreme ultraviolet (EUV) using wavelengths around 13.5 nm is the most promising approach to meet the demands of semiconductor chip manufacturing from the year 2007 on and
Autor:
I. Uschmann, T. Mi alla, E. F rster, M. Fajardo, D. Klopfel, Claude Chenais-Popovics, Jean-François Wyart, J. C. Gauthier
Publikováno v:
Scopus-Elsevier
The spectra of highly-charged ions produced by laser irradiation on flat targets at about 5 × 1014 W cm-2 are recorded in the range from 0.60 nm to 0.95 nm (6 A to 9.5 A) by means of two spectrographs (a flat ADP crystal and a Johann, SiO2 crystal s
Autor:
Paul Gibbon, E. Förster, D. Klopfel, Antoine Rousse, Christian Rischel, J. C. Gauthier, Ingo Uschmann, P. Audebert, J. P. Geindre, Thomas Feurer
Publikováno v:
ResearcherID
Scopus-Elsevier
Scopus-Elsevier
High intensity fs-laser pulses can deliver focused intensities in the region of 1016–1019 W/cm2. If the laser pulse is focused onto a solid or gaseous material, a plasma is created. The electrons, as well as the ions are accelerated in the strong l
Externí odkaz:
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http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000086755100012&KeyUID=WOS:000086755100012
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