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pro vyhledávání: '"D. Kh. Kvon"'
Autor:
Sergey A. Dvoretsky, D. Kh. Kvon, R.N. Smirnov, Yu. G. Sidorov, D. G. Ikusov, V. A. Shvets, N. Dai, Nikolay N. Mikhailov
Publikováno v:
Optoelectronics, Instrumentation and Data Processing. 43:375-381
HgTe/Cd0.735Hg0.265Te nanostructures with HgTe quantum wells 16.2 and 21.0 nm thick are grown without additional doping on (013)CdTe/ZnTe/GaAs substrates by the method of molecular beam epitaxy. The compositions and thicknesses of the wide-gap layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d841ca79a2314ced0f8d987c444832a
https://doi.org/10.3103/s8756699007040127
https://doi.org/10.3103/s8756699007040127
