Zobrazeno 1 - 10
of 68
pro vyhledávání: '"D. Kannadassan"'
Publikováno v:
IEEE Open Journal of Antennas and Propagation, Vol 5, Iss 4, Pp 1004-1012 (2024)
Fifth generation (5G) wireless communication systems demand compact and low-profile high gain wideband antenna. Planar log-periodic array antenna (pLPA) has such potential qualities for 5G base-station and user-devices. However, many important featur
Externí odkaz:
https://doaj.org/article/b7509b556a5a4827ba28672d2bd13003
Autor:
Kadiyam Rajshekar, D. Kannadassan
Publikováno v:
IEEE Access, Vol 9, Pp 158842-158851 (2021)
In this paper, we present the physical modeling and numerical simulations of p-type Cu2O TFT for the design and development of active matrix displays. In Cu2O, the carrier transport is through copper and oxygen vacancies ( $V_{Cu}$ and $V_{O}$ ) whic
Externí odkaz:
https://doaj.org/article/a7f5a9331c3e4e5da8826d9f1e2a7d05
Autor:
Kadiyam Rajshekar, Hsiao-Hsuan Hsu, Koppolu Uma Mahendra Kumar, P. Sathyanarayanan, V. Velmurugan, Chun-Hu Cheng, D. Kannadassan
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 948-958 (2020)
Fabrication, physical modeling and dynamic response of p-type Al-doped SnOx active channel thin film transistors (TFTs) are presented for the potential application of ultra-high definition (UHD) displays. After deposition of Al-doped SnOx active laye
Externí odkaz:
https://doaj.org/article/a44958fdba044daa93dfe9c6a125253c
Autor:
D. Kannadassan, P. Sumithra
Publikováno v:
IEEE Transactions on Antennas and Propagation. 69:8257-8270
Origin of wideband nature and radiation behaviour in many broadband antenna structures is not clearly understood. In this paper, we have attempted to clarify those phenomena using characteristic mode (CM) analysis along with equivalent circuit modeli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9eb9af40cba18227bb748f3ba4e00cc4
https://doi.org/10.1109/tap.2021.3090805
https://doi.org/10.1109/tap.2021.3090805
Autor:
D. Kannadassan, Dudekula Shaikshavali
Publikováno v:
Journal of Electromagnetic Waves and Applications. 36:29-47
In this paper, we have presented the influence of surface traps/states on RF and microwave performance of fully recessed Schottky anode AlGaN/GaN lateral Schottky barrier diode (L-SBD) using numeri...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::126a089689d9117707dad23dd3634638
https://doi.org/10.1080/09205071.2021.1956374
https://doi.org/10.1080/09205071.2021.1956374
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
D. Kannadassan, C.R. Lakshmi
Publikováno v:
Journal of Electromagnetic Waves and Applications. 35:833-847
Bandstop filters with single and dual stop-bands were implemented using coupled mode microstrip slot resonators (MSRs) for the first time. With compact and ease of fabrication, the MSRs provide exc...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15c5498589d4c4c9907e9bc4e06ede7b
https://doi.org/10.1080/09205071.2020.1861991
https://doi.org/10.1080/09205071.2020.1861991
Autor:
Chun-Hu Cheng, Hsiao-Hsuan Hsu, V. Velmurugan, Koppolu Uma Mahendra Kumar, D. Kannadassan, P. Sathyanarayanan, Kadiyam Rajshekar
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 948-958 (2020)
Fabrication, physical modeling and dynamic response of p-type Al-doped SnOx active channel thin film transistors (TFTs) are presented for the potential application of ultra-high definition (UHD) displays. After deposition of Al-doped SnOx active laye
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7448f85550575208d81447798d2db0e5
https://doi.org/10.1109/jeds.2020.3018463
https://doi.org/10.1109/jeds.2020.3018463
Autor:
Chun-Hu Cheng, P. Sathyanarayanan, V. Velmurugan, Kadiyam Rajshekar, Koppolu Uma Mahendra Kumar, D. Kannadassan, Hsiao-Hsuan Hsu
Publikováno v:
IEEE Transactions on Electron Devices. 66:1314-1321
With experimental and numerical simulation, we report the origin of the performance enhancement in p-type SnO thin-film transistors (TFTs) due to fluorine plasma treatment (FPT). To study the effect of fluorination, using the reactive-ion-etching pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e851010c97a358bb62410b0b838a44d7
https://doi.org/10.1109/ted.2019.2895042
https://doi.org/10.1109/ted.2019.2895042
Autor:
D. Suhas, D. Kannadassan
Publikováno v:
2019 IEEE MTT-S International Microwave and RF Conference (IMARC).
Dual-band band-stop and band-pass filters are demonstrated using a new and simple Defected Ground Structure (DGS). The asymmetric single S-shaped DGS is used to obtain the dual-band filter response. The structure is relatively much simpler than other
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c229ad8ead56f6e439511a84befb436
https://doi.org/10.1109/imarc45935.2019.9118749
https://doi.org/10.1109/imarc45935.2019.9118749