Zobrazeno 1 - 10
of 25
pro vyhledávání: '"D. Kamenitsa"'
Autor:
Charles W. Magee, Al F. Tasch, B. Freer, Robert B. Simonton, D. Kamenitsa, K. Parab, R. Reece, S.-H. Yang, S. Tian, S. Morris
Publikováno v:
Journal of The Electrochemical Society. 142:3215-3219
The effect of dose rate on ion implanted impurity profiles in single-crystal silicon has been carefully and systematically examined. It is found that for both boron (light mass) and arsenic (heavy mass), the dose rate has a small but clearly observab
Publikováno v:
Journal of Applied Physics. 71:2441-2448
Previous investigations have reported substrate tilt and azimuthal (twist) orientations for bare, single‐crystal gallium arsenide (GaAs) targets that control channeling‐induced device parameter nonuniformities in variable scan angle (electrostati
Publikováno v:
2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432).
Pre-amorphization (PA) implants are becoming increasingly popular in CMOS processing as junction depths decrease. As an isoelectric species, germanium has demonstrated a capability for performing such implants into silicon. The gaseous vapor of liqui
Autor:
S. Prussin, J. F. Kirchhoff, M. F. Morris, J. Jackson, D. Kamenitsa, R. Hummel, Yi Chen, Al F. Tasch, S. Tian, S. Baumann
Publikováno v:
AIP Conference Proceedings.
The Monte Carlo ion implant simulator UT-MARLOWE has usually been verified using a large array of Secondary Ion Mass Spectroscopy (SIMS) data (∼200 profiles per ion species)(1). A model has recently been developed (1) to explicitly simulate defect
Autor:
Al F. Tasch, S. Morris, S. Tian, M. Morris, R. Simonton, K. Parab, S.-H. Yang, D. Kamenitsa, C. Magee, B. Obradovich
Publikováno v:
MRS Proceedings. 396
With increasing levels of integration, future generations of integrated circuit technology will require extremely shallow dopant profiles. Ion implantation has long been used in semiconductor material processing and will be a vitally important techni
Autor:
S. Morris, D. Kamenitsa, C. Evans, Al F. Tasch, S.-H. Yang, J. Sheng, C. Magee, L. M. Lam, V. Ghante
Publikováno v:
MRS Proceedings. 396
The continued decrease in semiconductor device feature size has required much smaller thermal processing budgets in order to achieve the required compact doping profiles. As a result, the impurity profiles have a larger dependence on the ion implant
Autor:
D. Kamenitsa, Al F. Tasch, R. Simonton, K.B. Parab, Charles W. Magee, S. Tian, S.-H. Yang, S. J. Morris
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 14:260
Deep submicron (
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Akademický článek
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