Zobrazeno 1 - 4
of 4
pro vyhledávání: '"D. K. Sysoev"'
Publikováno v:
Вестник СибАДИ, Vol 0, Iss 3(55), Pp 68-74 (2017)
The basic methods for approximating the elementary functions of the probability distribution density of a random sample from the general set of statistical material used in the field of operational reliability of cars are analyzed. It was proposed to
Externí odkaz:
https://doaj.org/article/eb8dc2926d5a44c7a4bd954bfb8cf495
Publikováno v:
Semiconductors. 52:348-351
A modified Schottky-barrier model, which is nonlinear in terms of the surface-state concentration and contains a local quasi-Fermi level at the interface induced by excess surface charge, is proposed. Such an approach makes it possible to explain the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffc6d7910b88172771e25db4f978cc9c
https://doi.org/10.1134/s106378261803003x
https://doi.org/10.1134/s106378261803003x
Publikováno v:
Вестник СибАДИ, Vol 0, Iss 3(55), Pp 68-74 (2017)
The basic methods for approximating the elementary functions of the probability distribution density of a random sample from the general set of statistical material used in the field of operational reliability of cars are analyzed. It was proposed to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::295ae2e45663173deb2cf0c36a5c903f
https://vestnik.sibadi.org/jour/article/view/13
https://vestnik.sibadi.org/jour/article/view/13
Autor:
A. V. Sankin, R. H. Dadashev, V. I. Altukhov, D. Z. Elimkhanov, R. T. Uspazhiev, M. A. A. Gudaev, D. K. Sysoev
Publikováno v:
IOP Conference Series: Materials Science and Engineering. 905:012017
The main methods for producing 4H-SiC single crystals and films of its solid solutions are considered. A new technique for producing single crystals of SiC polytypes is described. A new nonlinear model of the Schottky barrier height (BS) has been dev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e307311065480047f639b0d1bdf32cb7
https://doi.org/10.1088/1757-899x/905/1/012017
https://doi.org/10.1088/1757-899x/905/1/012017