Zobrazeno 1 - 10
of 29
pro vyhledávání: '"D. K. Kabilov"'
Publikováno v:
Semiconductor Science and Technology. 14:1012-1017
Photoelectric properties of (HMS)-SiMn-M structures, where HMS is higher manganese silicide formed in diffusion doping of silicon with manganese and M is metal contact, have been studied in a wide range of temperatures and light wavelengths. After il
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bdcffb005bcf2ebddcc1e5dbef78f80f
https://doi.org/10.1088/0268-1242/14/11/312
https://doi.org/10.1088/0268-1242/14/11/312
Autor:
R. A. Muminov, Kh. Kh. Khusnutdinova, I.S. Samiev, V. V. Klechkovskaya, T. S. Kamilov, D. K. Kabilov
Publikováno v:
Technical Physics. 50:1102-1104
The formation of higher manganese silicide (HMS) films on silicon and the properties of the silicide-silicon interface are studied. Morphology analysis of the surface and thin transition layer at the HMS-Si interface suggests that the growth of HMS f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ca5b741baa4604525235f2e3f2d4ee7
https://doi.org/10.1134/1.2014547
https://doi.org/10.1134/1.2014547
Publikováno v:
Proceedings ICT'03. 22nd International Conference on Thermoelectrics (IEEE Cat. No.03TH8726).
The analysis of possibilities of producing the thin-film thermoelectric radiation detector was carried out. It is shown that use of the higher manganese silicide (HMS) films, which formed directly on silicon substrate, allows to avoid the row constri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d1dc4fc94dd9da00b09604d31f98ac3
https://doi.org/10.1109/ict.2003.1287529
https://doi.org/10.1109/ict.2003.1287529
Autor:
I.S. Zanaveskina, V. V. Klechkovskaya, D. K. Kabilov, A.A. Uzokov, T. S. Kamilov, S.V. Ordin, B. N. Zaveryukhin, R. A. Muminov
Publikováno v:
Proceedings ICT'03. 22nd International Conference on Thermoelectrics (IEEE Cat. No.03TH8726).
It is known that HMS - MnSi/sub 1.71-1.75/ is an anisotropy degenerative semiconductor and has figure-of-merit Z=0.7x10/sup -3/ K/sup -1/ in the range T=400-1000K. It is used in production of high effective thermoelectric converters. Besides, HMS has
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14e6b2a794164eef5261c98afc0447a3
https://doi.org/10.1109/ict.2003.1287528
https://doi.org/10.1109/ict.2003.1287528
Autor:
Orekhov, A. S.1, Kamilov, T. S.2, Gaibov, A. G.2, Vakhabov, K. I.2, Klechkovskaya, V. V.1 klechvv@ns.crys.ras.ru
Publikováno v:
Technical Physics. Jun2010, Vol. 55 Issue 6, p874-876. 3p. 2 Black and White Photographs, 1 Chart.
Publikováno v:
Japanese Journal of Applied Physics; 5/5/2023, Vol. 62 Issue SD, p1-9, 9p
Publikováno v:
Semiconductors. Oct2015, Vol. 49 Issue 10, p1281-1284. 4p.
Publikováno v:
Technical Physics. Dec2014, Vol. 59 Issue 12, p1833-1838. 6p.
Autor:
Kamilov, T.1 tulkyn@mail.ru, Klechkovskaya, V.2 klechvv@ns.crys.ras.ru, Sharipov, B.1, Turaev, A.1
Publikováno v:
Technical Physics. Aug2013, Vol. 58 Issue 8, p1182-1188. 7p. 4 Graphs.
Publikováno v:
Technical Physics. Jun2013, Vol. 58 Issue 6, p902-906. 5p. 3 Graphs.