Zobrazeno 1 - 10
of 50
pro vyhledávání: '"D. K. Gautam"'
Publikováno v:
Journal of Mountain Area Research, Vol 1, Pp 40-52 (2016)
The soil and land resources play a vital role in sustaining the local livelihoods of rural communities in the Himalaya. Most of the arable land has already been brought under cultivation, hence the ever-increasing demand for food and fiber has left f
Externí odkaz:
https://doaj.org/article/5250b3f0e93b4c77ae5b51e87634d3b1
Publikováno v:
AIP Advances, Vol 5, Iss 5, Pp 057160-057160-9 (2015)
Thin film solar cells are cheaper but having low absorption in longer wavelength and hence, an effective light trapping mechanism is essential. In this work, we proposed an ultrathin crystalline silicon solar cell which showed extraordinary performan
Externí odkaz:
https://doaj.org/article/2c8522fc0c824c6aa71c929b4685d9d8
Autor:
G. U. Mali, D. K. Gautam
Publikováno v:
Advances in Intelligent Systems and Computing ISBN: 9789811548505
In a heterogeneous wireless network, the server–client architecture plays a vital role. As the clients request the data from the servers, they analyze the requests and stream the data to the clients through a specified protocol of the instance netw
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::526c4973fce08615eefc980e39f6eb21
https://doi.org/10.1007/978-981-15-4851-2_5
https://doi.org/10.1007/978-981-15-4851-2_5
Autor:
D. K. Gautam, Jyoti R. Chaudhari
Publikováno v:
Silicon. 11:549-556
In Integrated Circuit (IC) Technology practical circuit application of single electron devices is impossible due to it poor driving capability according to this point it is essential to accept implementation of new methodology such as hybridization o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c4ec896565ce7706c3d9dddf4fe864e
https://doi.org/10.1007/s12633-017-9741-8
https://doi.org/10.1007/s12633-017-9741-8
Autor:
Jyoti R. Chaudhari, D. K. Gautam
Publikováno v:
Silicon. 11:751-759
In future nanometer technology, Single electron devices are promising device element to meet the demand for increasing in density, performance and power dissipation in ultra large scale integration. It appears that CMOS and SETs are rather complement
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ece9b291e17a49e000758549cb7c4ccd
https://doi.org/10.1007/s12633-018-9834-z
https://doi.org/10.1007/s12633-018-9834-z
Autor:
Ganesh U. Mali, D. K. Gautam
Publikováno v:
Wireless Personal Communications. 100:1393-1404
Evaluation of the shortest path in a wireless network is to ensure the fast and guaranteed delivery of the data over the established wireless network. Most of the wireless protocols are using a shortest path evaluation technique which is based on the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f8eeb7d012773f1736aeab2948637d3
https://doi.org/10.1007/s11277-018-5645-1
https://doi.org/10.1007/s11277-018-5645-1
Autor:
D. K. Gautam, Siddhasen R. Patil
Publikováno v:
Silicon. 10:2063-2069
In nanometer regime, the variations in process parameters and environment parameters are increased radically which motivate the use of Statistical Static Timing Analysis (SSTA). In this paper, we propose a process and environment sensitivity based, S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b94f9cb57d6773562bedff26f54b05c8
https://doi.org/10.1007/s12633-017-9721-z
https://doi.org/10.1007/s12633-017-9721-z
Autor:
Rashmi Mahajan, D. K. Gautam
Publikováno v:
Silicon. 10:85-90
The paper reports the analytical model for the analysis of the effects of channel doping on the threshold voltage. A silicon germanium p-MOSFET with high-k dielectric material along with a metal gate is used for the analysis. The presented model cons
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb1c354c80acb7811e7ab97b873e775f
https://doi.org/10.1007/s12633-017-9631-0
https://doi.org/10.1007/s12633-017-9631-0
Autor:
D. K. Gautam, Siddhasen R. Patil
Publikováno v:
Silicon. 9:371-378
Process parameter variations of MOSFET and environment parameter variations of the high speed VLSI circuits have become a critical issue in timing analysis. This paper proposes the statistical modeling of basic logic gates and flip-flops used for com
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1011605a4966a03116c459e870cf6c06
https://doi.org/10.1007/s12633-016-9453-5
https://doi.org/10.1007/s12633-016-9453-5
Autor:
Rashmi Mahajan, D. K. Gautam
Publikováno v:
Silicon. 8:505-511
The present paper proposes a novel concept which can successfully reduce threshold voltage and increase switching speed of a conventional MOSFET. The proposed structures have been incorporated with a silicon germanium (SiGe) layer as a channel at the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3698f261f819c16256e6a7c2c389f344
https://doi.org/10.1007/s12633-016-9407-y
https://doi.org/10.1007/s12633-016-9407-y