Zobrazeno 1 - 10
of 74
pro vyhledávání: '"D. K. Ferry"'
Autor:
D. K. Ferry
Publikováno v:
IEEE Nanotechnology Magazine. 6:18-25
We will examine the mobility and high-field velocity in graphene placed upon various substrates, such as boron nitride (BN), silicon carbide (SiC), or silicon dioxide (SiO2). The transport is subject to the intrinsic phonons in graphene as well as fl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1eec34429725c8b5a53864abbd82839
https://doi.org/10.1109/mnano.2012.2220233
https://doi.org/10.1109/mnano.2012.2220233
Autor:
D. K. Ferry, M. J. Gilbert
Publikováno v:
Journal of Physics: Conference Series. 38:134-139
We use a fully self-consistent three-dimensional quantum mechanical transport formalism to examine the performance of InAs based quantum wire transistors both in the ballistic limit and with phonon scattering included. We present a method for the inc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e5e22a116da8cde186ce63aad311719
https://doi.org/10.1088/1742-6596/38/1/033
https://doi.org/10.1088/1742-6596/38/1/033
Publikováno v:
International Journal of High Speed Electronics and Systems. 11:363-385
It is clear that continued scaling of semiconductor devices will bring us to a regime in which device gate lengths are less than 50 nm within another decade. Pushing to dimensional sizes such as this will probe the transition from classical to quantu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02aceb3ea46da467c4359205aaf35ab7
https://doi.org/10.1142/s0129156401000885
https://doi.org/10.1142/s0129156401000885
Publikováno v:
Semiconductor Science and Technology. 11:1552-1557
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5ea3038a874201a4595dc7260e05fd4
https://doi.org/10.1088/0268-1242/11/11s/017
https://doi.org/10.1088/0268-1242/11/11s/017
Autor:
S. E. Günçer, D. K. Ferry
Publikováno v:
Mathematical and Computer Modelling. 23(8-9):131-140
Light scattering from conduction electrons (or from valence holes) can give information on the time-resolved velocity distribution of nonequilibrium carriers. The experimental approach utilizes, e.g., Raman scattering from the single particles to asc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2efcbb073efca2d7f275b748e80a0320
Autor:
M, Nedjalkov, S, Selberherr, D K, Ferry, D, Vasileska, P, Dollfus, D, Querlioz, I, Dimov, P, Schwaha
Publikováno v:
Annals of Physics
The Wigner–Boltzmann equation provides the Wigner single particle theory with interactions with bosonic degrees of freedom associated with harmonic oscillators, such as phonons in solids. Quantum evolution is an interplay of two transport modes, co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::87b9ef957d832dbbf11c5b492eca7e5e
https://pubmed.ncbi.nlm.nih.gov/23504194
https://pubmed.ncbi.nlm.nih.gov/23504194
Publikováno v:
Journal of physics. Condensed matter : an Institute of Physics journal. 23(46)
We use numerical simulations to investigate the spin Hall effect in quantum wires in the presence of both Rashba and Dresselhaus spin-orbit coupling. We find that the intrinsic spin Hall effect is highly anisotropic with respect to the orientation of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::26b25ef4fcadf4f67d6f37c71c523920
https://pubmed.ncbi.nlm.nih.gov/22052818
https://pubmed.ncbi.nlm.nih.gov/22052818
Publikováno v:
Semiconductor Science and Technology. 7:B360-B363
Barrier calculations based upon solutions of the Liouville equation in the coordinate representation reveal a complicated spatial dependence of the quantum distribution function near and within the barriers. Within the framework of classical transpor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d6e481123185b2e48856d56ef65c1f0
https://doi.org/10.1088/0268-1242/7/3b/093
https://doi.org/10.1088/0268-1242/7/3b/093
Autor:
D. K. Ferry
Publikováno v:
physica status solidi c. 5
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4d220321584035ad1914d3a7aafa74b
https://doi.org/10.1002/pssc.200890000
https://doi.org/10.1002/pssc.200890000
Autor:
D. K. Ferry, M. J. Gilbert
Publikováno v:
Nonequilibrium Carrier Dynamics in Semiconductors ISBN: 9783540365877
We present the results of a three-dimensional, self-consistent ballistic quantum mechanical simulation of an indium arsenide (InAs) quantum wire metal oxide semiconductor field effect transistor (MOSFET) with channel lengths of approximately 10 nm. W
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d802bef16732a2815e6498d644be8d0
https://doi.org/10.1007/978-3-540-36588-4_56
https://doi.org/10.1007/978-3-540-36588-4_56
