Zobrazeno 1 - 10 of 61 pro vyhledávání: '"D. J. Wolford"'
3
Temperature Dependence of Bound Exciton Emissions in GaN
Autor: Zhe Chuan Feng, D. J. Wolford, G. D. Gilliland, Matthew J. Schurman, D. G. Chtchekine, S. J. Chua, S. E. Ralph, Ian T. Ferguson
Publikováno v: Scopus-Elsevier
The dissociation channels of two prominent bound exciton complexes in wurtzite GaN thin films are determined via an extensive temperature dependent photoluminescence study. The shallow donor bound exciton dissociation at low temperatures (T ≤ 50 K)
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a576615da6a95650f3f48caefad23161
https://doi.org/10.1557/s1092578300003331
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4
Exciton transport and nonradiative decay in semiconductor nanostructures
Autor: D. J. Wolford, Ilya Krivorotov, G. D. Gilliland, L. P. Fu, K. K. Bajaj, T. Chang
Publikováno v: Physical Review B. 58:10687-10691
A phenomenological theory describing the exciton photoluminescence ~PL! kinetics in type-II superlattices is proposed herein, which takes into account both the intrinsic exciton radiative decay and nonradiative decay due to exciton trapping by interf
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8d5c2b45ec715cacb62710d054690d4a
https://doi.org/10.1103/physrevb.58.10687
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5
Time-dependent heterointerfacial band bending and quasi-two-dimensional excitonic transport in GaAs structures
Autor: G. D. Gilliland, G. A. Northrop, Thomas F. Kuech, J. A. Bradley, D. J. Wolford, M. S. Petrovic, Leigh M. Smith, H. P. Hjalmarson
Publikováno v: Physical Review B. 58:4728-4732
Using a time-resolved photoluminescence imaging technique with high spectral, temporal, and spatial resolution, we have directly measured the time- and carrier-density-dependent heterointerfacial band bending in GaAs/Al{sub x}Ga{sub 1{minus}x}As stru
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e203c21907d3daf4bcc1cfddabe329b5
https://doi.org/10.1103/physrevb.58.4728
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6
Microscopic mechanisms governing exciton-decay kinetics in type-II GaAs/AlAs superlattices
Autor: John F. Klem, L. P. Fu, K. K. Bajaj, R. Chen, F. T. Bacalzo, G. D. Gilliland, D. J. Wolford
Publikováno v: Physical Review B. 52:2682-2687
We have measured the time- and space-resolved evolution of type-II excitons in GaAs/AlAs superlattices with various AlAs layer thicknesses, at temperatures ranging from 1.8 to 30 K. Our photoluminescence (PL) time decay and transport results demonstr
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c30bcbe139e84baf877c9f444d750c91
https://doi.org/10.1103/physrevb.52.2682
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7
Temperature-dependent radiative recombination of free excitons in high-quality GaAs heterostructures
Autor: J. A. Bradley, G. D. Gilliland, D. J. Wolford, Thomas F. Kuech, H. P. Hjalmarson
Publikováno v: Journal of Luminescence. :830-833
We have measured photoluminescence decay kinetics versus temperature for high-quality MOCVD GaAs/Al 0.3 GaAs 0.7 double heterostructures which have been thoroughly characterized at room temperature. The measured lifetime is in good agreement with the
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a465ebbd176a8310c615f86baeb99470
https://doi.org/10.1016/0022-2313(94)90289-5
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9
Optically determined minority-carrier transport in GaAs/AlxGa1−xAs heterostructures
Autor: G. D. Gilliland, H. P. Hjalmarson, J. A. Bradley, Thomas F. Kuech, D. J. Wolford
Publikováno v: Physical Review B. 47:15601-15608
We have studied minority-carrier electron and hole transport versus temperature (30--300 K) in a series of undoped, ``interface-free,'' GaAs/${\mathrm{Al}}_{0.3}$${\mathrm{Ga}}_{0.7}$As double heterostructures prepared by organometallic vapor-phase e
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ec7eb0b7236895560e44ade6c92780a4
https://doi.org/10.1103/physrevb.47.15601
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10
Radiative recombination in MBE-prepared epitaxial Si and Si1-xGex layers
Autor: S. S. Iyer, G.A. Northrop, D. J. Wolford
Publikováno v: Solid State Communications. 79:161-165
Examination of near-gap low-temperature photoluminescence (PL) from epitaxial, MBE-prepared Si and Si 1- x Ge x alloys, prepared commensurately to (0 0 1) Si, failed to show either free excitons or dopant- bound-excitons in as-prepared layers. Signif
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a426c39678184a786e286c6277b9db62
https://doi.org/10.1016/0038-1098(91)90082-7
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