Zobrazeno 1 - 10
of 18
pro vyhledávání: '"D. J. Wallis"'
Publikováno v:
Microscopy of Semiconducting Materials 2003 ISBN: 9781351074636
Microscopy of Semiconducting Materials 2003
Microscopy of Semiconducting Materials 2003
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6afa16d53069591a7d50e32277e8818
https://doi.org/10.1201/9781351074636-35
https://doi.org/10.1201/9781351074636-35
Autor:
K, Rae, C, Foucher, B, Guilhabert, M S, Islim, L, Yin, D, Zhu, R A, Oliver, D J, Wallis, H, Haas, N, Laurand, M D, Dawson
Publikováno v:
Optics express. 25(16)
Red-, orange-, and green-emitting integrated optoelectronic sources are demonstrated by transfer printing blue InGaN µLEDs onto ultra-thin glass platforms functionally enhanced with II-VI colloidal quantum dots (CQDs). The forward optical power conv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::11b9e284459f78e55b8c895f68bfc29c
https://pubmed.ncbi.nlm.nih.gov/29041111
https://pubmed.ncbi.nlm.nih.gov/29041111
Publikováno v:
Journal of Applied Physics. 93:3893-3899
SiGe/Si multiple quantum wells, nominally 4 nm thick, were grown by low pressure chemical vapor deposition and the Ge distribution within the wells was studied using a variety of transmission electron microscope-based techniques. Energy-dispersive x-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e180df9507f96b2747ef3abb3db22ac7
https://doi.org/10.1063/1.1558993
https://doi.org/10.1063/1.1558993
Publikováno v:
Semiconductor Science and Technology. 12:943-946
Low-temperature mobilities for two-dimensional electron gases (2DEGs) formed in tensile-strained Si/SiGe heterostructures are reported, with values up to for a density of electrons. The strained layers were grown at in a ultra-high-vacuum chemical va
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bd79c883dcf8006aba805b38632e68b
https://doi.org/10.1088/0268-1242/12/8/002
https://doi.org/10.1088/0268-1242/12/8/002
Autor:
Yanqiu Zhu, D. J. Wallis, M. Terrones, C. Vizard, W. K. Hsu, P. J. Wright, C. L. Reeves, J. P. Hare, D. R. M. Walton, Humberto Terrones, H.W. Kroto, Susana Trasobares, A. J. Pidduck, Nicole Grobert
Publikováno v:
AIP Conference Proceedings.
Laser etching of Co, Ni and Fe films, in conjunction with the pyrolysis of solid organic precursors (e.g. aminodichlorotriazine, melamine, etc.) generates aligned carbon nanotube bundles and films of uniform length (< 200 mu m) and diameter (30 Angst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7287d2b79008ba51ecec37eaa0872e9a
https://doi.org/10.1063/1.56529
https://doi.org/10.1063/1.56529
Publikováno v:
MRS Proceedings. 533
In recent years the growth of virtual substrates using graded SiGe buffer layers has shown great promise for the development of high performance devices. Whilst significant progress has been made in the control of growth conditions to produce low thr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::adf88c7d8cc3bd2ecde10d395cda1bd4
https://doi.org/10.1557/proc-533-77
https://doi.org/10.1557/proc-533-77
Publikováno v:
MRS Proceedings. 466
A case study is presented in which HREM, Z-Contrast Imaging and EELS are used as complementary techniques for elucidating interface structure. The NiO-ZrO2(cubic) interface is investigated along two orthogonal directions by these electron imaging and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::912d9594105eb1d46df17e80cc50a886
https://doi.org/10.1557/proc-466-45
https://doi.org/10.1557/proc-466-45
Publikováno v:
MRS Proceedings. 396
GaAs nanocrystals have been formed by the sequential ion implantation method. The sequence of Ga and As ion implantation (i.e., Ga + As or As + Ga) is found to affect the size distributions of GaAs nanocrystals significantly. The nanocrystal sizes ar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ac191cbc6a4ec442c40467993539b3e
https://doi.org/10.1557/proc-396-447
https://doi.org/10.1557/proc-396-447
Publikováno v:
Proceedings, annual meeting, Electron Microscopy Society of America. 54:110-111
The epitaxial growth of dissimilar materials, or hetroepitaxy, is of great technological interest for a variety of reasons. Perhaps the most obvious of these is that high quality, large area substrates are unavailable for many materials. It is theref
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3be722f7081b03a27564214c3255eb2
https://doi.org/10.1017/s0424820100163010
https://doi.org/10.1017/s0424820100163010
Autor:
D. J. Wallis, Douglas J. Paul, A. C. Churchill, Michael Pepper, A. Ahmed, D. J. Robbins, A. J. Pidduck
Publikováno v:
Scopus-Elsevier
The low temperature electrical properties of modulation-doped two dimensional electron gases (2DEGs) in the SiGe system were studied. The effects on the electrical properties of removing the substrate from the growth chamber after the growth of the v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::10fe22dac1229f30619be721a6e3982b
https://doi.org/10.1116/1.589953
https://doi.org/10.1116/1.589953