Zobrazeno 1 - 10
of 97
pro vyhledávání: '"D. J. Szostak"'
Autor:
J. H. Thomas, F. J. Tams, D. M. Hoffman, H. Gilmartin, L. R. Hewitt, A.‐M. Lanzillotto, D. J. Szostak, J. T. McGinn
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 9:456-460
An investigation was made of Pt–Ir silicide films on (100)Si prepared by deposition of submonolayer thickness of Pt followed by 20–30 A of Ir. Submonolayer coverages of Pt induce a crystalline texture approaching an epitaxial relationship between
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5c5d28e6b5d77e9f3323d8394c17fb0
https://doi.org/10.1116/1.577432
https://doi.org/10.1116/1.577432
Autor:
J. H. Thomas, D. J. Szostak
Publikováno v:
Surface and Interface Analysis. 11:312-316
A backscattered electron technique has been used to improve the spacial resolution and elemental sensitivity beyond that obtained from standard Auger microprobe electron spectroscopy. The elastically backscattered electron peak amplitude has been mea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae20bdb3e4a38c761bdc7ed9447b5b9c
https://doi.org/10.1002/sia.740110608
https://doi.org/10.1002/sia.740110608
Autor:
D. J. Szostak, B. Goldstein
Publikováno v:
Journal of Applied Physics. 56:522-530
We have used Surface Photovoltage Profiling (SPVP) to study hydrogenated amorphous Si (a‐Si:H) p‐i‐n solar cells grown on glass/conductive‐transparent oxide (CTO) or stainless‐steel substrates. This technique involves the measurement by a K
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1d5d60c5376bac0a5bd8b9202df7bbc
https://doi.org/10.1063/1.333941
https://doi.org/10.1063/1.333941
Publikováno v:
Philosophical Magazine B. 46:63-70
The diffusion length of holes in undoped a-Si : H has been measured by a modified surface-photovoltage method. The a-Si : H was deposited from a d.c. glow discharge in silane. Both field-free and field-assisted hole transport were observed, and could
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74f837dc1f8f8dd74a0d1782fa077482
https://doi.org/10.1080/13642818208246422
https://doi.org/10.1080/13642818208246422
Autor:
Dickstein, Dylan, Ghazari, Arian, Nadvornick, Warren, Liao, Michael, Carson, Brandon, Goorsky, Mark, Ghoniem, Nasr
Publikováno v:
Journal of Applied Physics; 2/7/2023, Vol. 133 Issue 5, p1-15, 15p
Publikováno v:
AIP Conference Proceedings.
The diffusion length L for holes in undoped a‐Si:H films has been measured by using a variation of the Surface Photovoltage Method where the sample was illuminated with unmodulated light and the surface photovoltage ΔV was measured with a vibratin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a893fb3802c67330080956bf3ee4ab0
https://doi.org/10.1063/1.33054
https://doi.org/10.1063/1.33054
Publikováno v:
Advanced Materials Interfaces; 6/17/2024, Vol. 11 Issue 17, p1-9, 9p
Publikováno v:
Journal of Applied Physics. 48:1007-1008
Improved negative electron affinity (NEA) photoemission sensitivity has been obtained from GaAs reflection photocathodes grown from a stoichiometric (rather than arsenic‐rich) vapor phase on {100} substrates. Sensitivities as high as 2150 μA/lm wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e694ffb515dfea0a0eb4eb6b7493826
https://doi.org/10.1063/1.323798
https://doi.org/10.1063/1.323798
Publikováno v:
Applied Physics Letters. 38:998-999
The diffusion length L for holes in undoped a‐Si:H films has been measured by using a variation of the surface photovoltage method. Values of L in the range 0.33–0.45 μ were found for samples prepared at substrate temperatures Ts = 240 °C and T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61d62785e54d5d88765ad6a239c50e16
https://doi.org/10.1063/1.92226
https://doi.org/10.1063/1.92226
Autor:
Szostak, D. J., Goldstein, B.
Publikováno v:
Journal of Applied Physics; Jul1984, Vol. 56 Issue 2, p522-530, 9p