Výsledky vyhledávání - "D. J. Stirland"

A uniformity investigation of undoped, semi-insulating GaAs grown by the vertical Bridgman technique

Autor: D. J. Stirland, M.R. Brozel, L Breivik, Sebahattin Tüzemen

Publikováno v: Semiconductor Science and Technology. 7:A269-A274

The authors have carried out a uniformity investigation of undoped, semi-insulating GaAs grown by the vertical Bridgman method. They have employed A/B etching, EL2 mapping and near-bandgap absorption (reverse contrast, RC) mapping to reveal dislocati

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::df4c7e36500871c807b8e9cba7ac8d37
https://doi.org/10.1088/0268-1242/7/1a/051

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Vacancy-type defects after post-growth heat treatment in SI GaAs: a positron study

Autor: J M Clayton, A Alam, D J Stirland, D T J Hurle, S G Usmar

Publikováno v: Semiconductor Science and Technology. 7:A233-A236

Positron lifetime results in semi-insulating and p-type materials after various heat treatments are presented. In as-grown and subsequently annealed (at 950 degrees C) materials a long-lived component of approximately 300 ps of substantial intensity

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1dbcf9a69b4a20ff0ffccd3f805de37e
https://doi.org/10.1088/0268-1242/7/1a/045

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Dislocation density, infrared absorption and cathodoluminescence mapping of microstructure associated with dislocation cells in semi-insulating LEC GaAs

Autor: L. Breivik, A. G. Cullis, G. M. Williams, M.R. Brozel, D. J. Stirland

Publikováno v: Applied Surface Science. 50:475-479

We have investigated the microstructure that occurs both inside and closely associated with dislocation cells in undoped, semi-insulating LEC GaAs. Using A/B etching, we have identified regions containing large volumes of this microstructure for exam

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1c33a16fb896c9293d2e8adccfb044fb
https://doi.org/10.1016/0169-4332(91)90221-5

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Control of defects in the heteroepitaxial growth of GaAs on silicon

Autor: D. J. Stirland, P. Kightley, R.J.M. Griffiths, R. R. Bradley, R. I. Taylor, T.B. Joyce, P.D. Hodson, J. A. Beswick

Publikováno v: Vacuum. 40:339-346

In this paper we present the results of a study of the approaches we have adopted to limit defect propagation in GaAs on silicon. These include use of SLS, thermal annealing, and restricted area growth. We have demonstrated that bands of GalnAs/GaAs

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ac855361341731f60f39a24313d825b8
https://doi.org/10.1016/0042-207x(90)90089-h

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First direct observation of voids in bulk, undoped, semi‐insulating GaAs

Autor: D. J. Stirland, G. M. Williams, A. G. Cullis

Publikováno v: Applied Physics Letters. 59:2585-2587

Defect selective A/B chemical etching, low‐temperature scanning cathodoluminescence, and transmission electron microscopy have been used to study the microstructure of undoped, semi‐insulating liquid‐encapsulated Czochralski GaAs wafers. It is

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::01b6e1503e7199e55ff26761fac06564
https://doi.org/10.1063/1.105910

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Electrical compensation in semi-insulating gallium arsenide

Autor: R C Newman, C Whitehead, J Butler, A Ritson, M R Brozel, D J Stirland

Publikováno v: Journal of Physics C: Solid State Physics. 11:1857-1863

Boat-grown gallium arsenide doped with both silicon and chromium has been subjected to Hall effect measurements, mass spectrometry, optical and electron microscopy, and localised vibrational mode (LVM) absorption measurements. The net silicon donor c

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::14023da4fa7ba592c7922bf3f7dfdfe7
https://doi.org/10.1088/0022-3719/11/9/023

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