Zobrazeno 1 - 10
of 71
pro vyhledávání: '"D. J. Resnick"'
Modeling and simulation issues in Monte Carlo calculation of electron interaction with solid targets
Autor:
P. J. Mangat, Bing Lu, V.V. Ivin, Kevin J. Nordquist, G. A. Babushkin, M.V. Silakov, D. J. Resnick
Publikováno v:
Microelectronic Engineering. 69:594-605
Several Monte Carlo approaches for modeling electron-solid interaction have been investigated as to their impact on simulation accuracy and performance. An optimum set of models, including the Mott elastic scatter cross-section, the Moller inelastic
Autor:
William J. Dauksher, D. J. Resnick, Kevin J. Nordquist, Todd Bailey, David P. Mancini, Carlton G Willson, S. Johnson, John G. Ekerdt, Sidlgata V. Sreenivasan
Publikováno v:
Microelectronic Engineering. 69:412-419
Step and flash imprint lithography (SFIL) is an attractive method for printing sub-100 nm geometries. Relative to other imprinting processes, SFIL has the advantage that the template is transparent, thereby facilitating conventional overlay technique
Autor:
David P. Mancini, Todd Bailey, Kevin J. Nordquist, K. Gehoski, John G. Ekerdt, Sidlgata V. Sreenivasan, Andy E. Hooper, Jeffrey H. Baker, L. Dues, William J. Dauksher, D. J. Resnick, S. Johnson, Carlton G Willson
Publikováno v:
Microelectronic Engineering. :221-228
Step and flash imprint lithography (SFIL) replicates patterns by using a transparent template with relief images etched into its surface. Recent work has examined alternative methods for template fabrication. One scheme incorporates a conductive and
Autor:
Pawitter J. S. Mangat, William J. Dauksher, S. Hall, S. B. Clemens, A. Chambers, Huma Ashraf, Janet Hopkins, L. Lea, Peter L. G. Ventzek, D. J. Resnick, K. H. Smith, Shahid Rauf, P.J Stout
Publikováno v:
Microelectronic Engineering. :887-894
EPL test vehicles, both SCALPEL and PREVAIL formats, have been dry etched in a new high rate ICP tool commercially available from STS. Equipment scale modeling was conducted to elucidate the physics of the reactor, and the associated feature evolutio
Autor:
K. Gehoski, M. Meissl, William J. Dauksher, D. J. Resnick, Sidlgata V. Sreenivasan, Eric S. Ainley, Matthew E. Colburn, Jeffrey H. Baker, Byung Jin Choi, David P. Mancini, Kevin J. Nordquist, John G. Ekerdt, Todd Bailey, Carlton G Willson, A. Alec Talin, S. Johnson
Publikováno v:
Microelectronic Engineering. :461-467
Step and flash imprint lithography (SFIL) is an attractive method for printing sub-100 nm geometries. Relative to other imprinting processes, SFIL has the advantage that the template is transparent, thereby facilitating conventional overlay technique
Publikováno v:
Microelectronic Engineering. :355-360
A traditional method of e-beam lithography simulation uses the convolution of beam point spread function (a.k.a. “proximity function”) with the electron dose image to calculate density of energy deposited in resist. The proximity function is calc
Autor:
D. J. Resnick, I. Johnston, William J. Dauksher, S. Hall, L. Lea, B.N. Ramamurthi, S. B. Clemens, Janet Hopkins, K. H. Smith, Shahid Rauf, Peter L. G. Ventzek, Jyoti Kiron Bhardwaj, Huma Ashraf, Pawitter J. S. Mangat, Valli Arunachalam
Publikováno v:
Microelectronic Engineering. :607-612
One avenue for increasing the available pattern area on SCALPEL masks is to gravitate towards a dry etch process for membrane fabrication. As mature as Bosch etch processes are for MEMS applications and the like, there is still significant process de
Autor:
D. Minyushkin, William J. Dauksher, V.V. Ivin, M.V. Silakov, Kevin J. Nordquist, Pawitter J. S. Mangat, D. J. Resnick, David P. Mancini, Zorian S. Masnyj, N.V. Vorotnikova, Eric S. Ainley, Bing Lu
Publikováno v:
Microelectronic Engineering. :505-510
One promising technology for next generation lithography is the electron projection technique called SCALPEL. Relatively thin membrane and scattering materials are required for high contrast imaging during SCALPEL wafer exposures. The thin SCALPEL me
Autor:
S. V. Pendharkar, Gloria J. Kerszykowski, D. J. Resnick, S. B. Clemens, M. Durlam, Saied N. Tehrani, Kelly W. Kyler, H. Tompkins
Publikováno v:
Microelectronic Engineering. 53:367-370
The continued growth in communications has increased the need for non-volatile memories. One particular approach is magnetoresistive random access memory (MRAM). Because there is no wear-out mechanism, read/write endurance is virtually unlimited, mak
Publikováno v:
Microelectronic Engineering. 46:375-378
NEB-22, a chemically amplified negative tone resist has been formulated by Sumitomo for e-beam lithography direct write and mask making applications. The resist has exhibited excellent characteristics which would also make it applicable for use in a