Zobrazeno 1 - 4
of 4
pro vyhledávání: '"D. J. O. Göransson"'
Publikováno v:
Physical Review B. 104
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2da667358e4d3963867d4d39e467c69
https://doi.org/10.1103/physrevb.104.235309
https://doi.org/10.1103/physrevb.104.235309
Autor:
B. Dalelkhan, Kan Li, Yingjie Xing, D. J. O. Göransson, Claes Thelander, Hongqi Xu, Ville F. Maisi
We report on transport measurement study of top-gated field effect transistors made out of InSb nanowires grown by chemical vapor deposition. The transistors exhibit ambipolar transport characteristics revealed by three distinguished gate-voltage reg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9575f35a16f22de6188edb0b9b5d3a94
http://arxiv.org/abs/2001.06647
http://arxiv.org/abs/2001.06647
Autor:
Ville F. Maisi, Magnus T. Borgström, Magnus Heurlin, Hongqi Xu, B. Dalelkhan, Maria E. Messing, Simon Abay, D. J. O. Göransson
We report on growth of InP-InAs core-shell nanowires and demonstration of the formation of single quantum structures, which show Coulomb blockade effect, over entire lengths of the nanowires. The core-shell nanowires are grown by a selective area gro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4a86057cf7a488ea5dad0aa7d951bb8d
http://arxiv.org/abs/1901.09645
http://arxiv.org/abs/1901.09645
Autor:
Irina Buyanova, Yuqing Huang, Weimin Chen, Dan Hessman, Maria E. Messing, Hongqi Xu, Magnus T. Borgström, D. J. O. Göransson
We report on experimental determination of the strain and bandgap of InAsP in epitaxially grown InAsP-InP core-shell nanowires. The core-shell nanowires are grown via metal-organic vapor phase epitaxy. The as-grown nanowires are characterized by tran
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::19e287028b8af26bdff107238e03f5d4