Zobrazeno 1 - 2
of 2
pro vyhledávání: '"D. J. Niegemann"'
Autor:
Adrien Morel, Louis Hutin, B. Brun-Barriere, D. J. Niegemann, Romain Maurand, V. El Homsy, Yann-Michel Niquet, Yvain Thonnart, Maud Vinet, T. Bedecarrats, B. Paz, B. Jadot, Simon Zihlmann, B. Martinez Diaz, N. Rambal, M. Nurizzo, Marc Sanquer, A. Amisse, Benoit Bertrand, Matias Urdampilleta, R. Ezzouch, Gerard Billiot, E. Vincent, Heimanu Niebojewski, Xavier Jehl, Tristan Meunier, Pierre-André Mortemousque, C. Spence, Jing Li, A. Apra, Etienne Dumur, V. Thiney, E. Catapano, H. Jacquinot, Cécile Xinqing Yu, B. Klemt, L. Pallegoix, V. Schmitt, Candice Thomas, M. Casse, N. Piot, E. Chanrion, Benjamin Venitucci, G. Troncoso Fernandez-Bada, Vincent P. Michal, S. De Franceschi, Jean Charbonnier
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM)
2020 IEEE International Electron Devices Meeting (IEDM), Dec 2020, San Francisco, United States. pp.30.1.1-30.1.4, ⟨10.1109/IEDM13553.2020.9371962⟩
66th International Electron Devices Meeting
66th International Electron Devices Meeting, Dec 2020, Online, United States. pp.30.1, ⟨10.1109/IEDM13553.2020.9371962⟩
2020 IEEE International Electron Devices Meeting (IEDM), Dec 2020, San Francisco, United States. pp.30.1.1-30.1.4, ⟨10.1109/IEDM13553.2020.9371962⟩
66th International Electron Devices Meeting
66th International Electron Devices Meeting, Dec 2020, Online, United States. pp.30.1, ⟨10.1109/IEDM13553.2020.9371962⟩
International audience; We discuss the status, challenges and perspectives of "Quantum CAD" for the design and exploration of spin qubits. We highlight the similarities and differences with conventional TCAD for micro-electronics, and focus on design
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::80b49a63e79240fbf43cdd0b83c45ec5
https://doi.org/10.1109/iedm13553.2020.9371962
https://doi.org/10.1109/iedm13553.2020.9371962
Autor:
C. Spence, Jing Li, Benoit Bertrand, E. Chanrion, A. Crippa, S. De Franceschi, Matias Urdampilleta, M. Sanquer, Fabio Ansaloni, Romain Maurand, Yann-Michel Niquet, Tsung-Yeh Yang, H. Bohuslavskyi, Xavier Jehl, Tristan Meunier, Ferdinand Kuemmeth, M. F. Gonzalez-Zalba, Anasua Chatterjee, M. Vinet, D. J. Niegemann, Theodor Lundberg, Louis Hutin, J. Michniewicz
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM)
2019 IEEE International Electron Devices Meeting (IEDM), Dec 2019, San Francisco, France. pp.37.7.1-37.7.4, ⟨10.1109/IEDM19573.2019.8993580⟩
2019 IEEE International Electron Devices Meeting (IEDM), Dec 2019, San Francisco, France. pp.37.7.1-37.7.4, ⟨10.1109/IEDM19573.2019.8993580⟩
We fabricated linear arrangements of multiple split-gate devices along an SOI mesa, thus forming a 2×N array of individually controllable Si quantum dots (QDs) with nearest neighbor coupling. We implemented two different gate reflectometry-based rea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::371d90a5d39e7f43a76b0d7c16a733a9
https://hal.science/hal-03537312
https://hal.science/hal-03537312
