Zobrazeno 1 - 10
of 108
pro vyhledávání: '"D. J. Lockwood"'
Autor:
M. G. Cottam, D. J. Lockwood
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-7 (2022)
Abstract We present an experimental and theoretical study for the lattice vibrational (phonon) modes in the quasi-one-dimensional (or chain-like) antiferromagnet RbCoCl3 at low temperatures both above and below the two different magnetic phase transi
Externí odkaz:
https://doaj.org/article/72e0fbf5915241e39891d0238fefbce5
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 5, Iss 1, Pp 2498-2504 (2014)
We report on the optical properties of SiGe nanowires (NWs) grown by molecular beam epitaxy (MBE) in ordered arrays on SiO2/Si(111) substrates. The production method employs Au catalysts with self-limited sizes deposited in SiO2-free sites opened-up
Externí odkaz:
https://doaj.org/article/ddbdf08e334740d2876b3b49235a7cd2
Autor:
M. G. Cottam, D. J. Lockwood
Publikováno v:
Physical Review B. 105
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e83901930a8f10b9124815ecfc8ed548
https://doi.org/10.1103/physrevb.105.064411
https://doi.org/10.1103/physrevb.105.064411
Autor:
M. G. Cottam, D. J. Lockwood
Publikováno v:
Low Temperature Physics. 38:549-558
Inelastic light scattering intensities in response to magnetic excitations are governed by magnetooptic coupling coefficients, which have been previously evaluated, for instance, for the ferrimagnetic Y3Fe5O12 (YIG) and the metamagnetic FeCl2 and FeB
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d37ce6ecbb8f48b6a0bc854f3d23aa1d
https://doi.org/10.1063/1.4733682
https://doi.org/10.1063/1.4733682
Autor:
D. J. Lockwood
Publikováno v:
ECS Transactions. 33:69-80
In opto-electronics and photonics, the severe disadvantage of an indirect band gap has limited the application of elemental silicon. Amongst a number of diverse approaches to engineering efficient light emission in silicon nanostructures, one system
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d78ec1727eb53889391f0ee9ca4d1d4c
https://doi.org/10.1149/1.3578022
https://doi.org/10.1149/1.3578022
Autor:
Nelson Rowell, J.-M. Baribeau, Li-Lin Tay, Jennifer A. Bardwell, D. J. Lockwood, R. Boukherroub
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 24:668-672
A single-reflection attenuated total reflection (ATR) technique has been used to study low index monolayers with a high index ATR hemisphere in an optical contact with the sample surface. A model calculation predicts a field enhancement with the pres
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3374404db2b18fbde8c7f3da91304768
https://doi.org/10.1116/1.2180270
https://doi.org/10.1116/1.2180270
Autor:
D. J. Lockwood
Publikováno v:
Low Temperature Physics. 28:505-509
The temperature dependence of the four Raman-active phonons in NiF2 is investigated at temperatures above and below the antiferromagnetic ordering temperature of TN=73 K. All four modes exhibit distinct anomalies in their intensities and frequencies
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::84d62ea16868e60afe8700a7c1cc2089
https://doi.org/10.1063/1.1496657
https://doi.org/10.1063/1.1496657
Autor:
M. R. T. Pearson, J.-M. Baribeau, H. Lafontaine, J. P. McCaffrey, Dan-Xia Xu, Siegfried Janz, Nelson Rowell, S. Moisa, D. J. Lockwood
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 18:588-592
This article explores the use of Si1−xGex quantum-well layers with a coherent-wave or island-growth morphology in Si1−xGex based telecommunications photodetectors. The structural properties of such heterostructures have been determined by transmi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::106ff10ff741f6c2c6e48f761d276aaf
https://doi.org/10.1116/1.582231
https://doi.org/10.1116/1.582231
Autor:
D. J. Lockwood
Publikováno v:
Journal of Solution Chemistry. 29:1039-1046
Electrochemical treatment of crystalline GaAs in 1 M HCl results in the formationof porous GaAs. As a by-product of the electrochemical dissolution process,small transparent crystals may grow on the porous GaAs skeleton under certainchemical conditio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2def542879922ffa464db19d2f1b9e1f
https://doi.org/10.1023/a:1005199104055
https://doi.org/10.1023/a:1005199104055
Autor:
D. J. Lockwood
Publikováno v:
Phase Transitions. 68:151-168
Amorphous Si/SiO2 superlattices with periodicities between 2 and 5 nm have now been grown on (1 00) Si wafers by several different techniques: molecular beam epitaxy, magnetron sputtering, and plasma enhanced chemical vapor deposition (PECVD). With t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38d1b990c09ab25ff1ef472627fb20de
https://doi.org/10.1080/01411599908224517
https://doi.org/10.1080/01411599908224517