Zobrazeno 1 - 1
of 1
pro vyhledávání: '"D. J. J. Loy"'
Publikováno v:
Scientific Reports, Vol 8, Iss 1, Pp 1-9 (2018)
Abstract We report on the conduction mechanisms of novel Ru/MgO/Cu and Ru/MgO/Ta resistive switching memory (RSM) devices. Current-voltage (I–V) measurements revealed Schottky emission (SE) as the dominant conduction mechanism in the high resistanc
Externí odkaz:
https://doaj.org/article/1b6f9e51bf60453ea153bdeba152b645
