Zobrazeno 1 - 10
of 162
pro vyhledávání: '"D. J. Goodwill"'
Autor:
Seitz, Sarina1,2 (AUTHOR), Schuster-Amft, Corina1,3,4 (AUTHOR), Wandel, Jasmin5 (AUTHOR), Bonati, Leo H.1,6,7 (AUTHOR), Parmar, Katrin1,6 (AUTHOR), Gerth, Hans Ulrich1,8 (AUTHOR), Behrendt, Frank1,4 (AUTHOR) frank.behrendt@unibas.ch
Publikováno v:
Scientific Reports. 6/27/2024, Vol. 14 Issue 1, p1-7. 7p.
Autor:
S. Ashcroft, Douglas A. Baillie, Frank A. P. Tooley, D. J. Goodwill, P. W. Foulk, J.A.B. Dines, Marc P.Y. Desmulliez, P. Black, N. L. Grant, Brian S. Wherrett
Publikováno v:
Applied optics. 34(23)
The algorithmic, electronic, and optical aspects of the implementation of a perfect-shuffle interconnected bitonic sorter are analyzed. The performance metrics such as the bit output data rate and the power consumption of the system are quantified. T
Autor:
B. Vögele, L. C. Wilkinson, Andrew C. Walker, M. McElhinney, D. J. Goodwill, F. Pottier, C.R. Stanley, D.T. Neilson
Publikováno v:
Applied Physics Letters. 70:2031-2033
This letter describes the performance of electro-absorption optical modulator structures, based on strain-balanced InGaAs/AlGaAs p-i-n multiple quantum wells (MQWs). It specifically considers the influence of lattice mismatch with the graded InGaAlAs
Publikováno v:
Applied Physics Letters. 64:1192-1194
We demonstrate a self‐electro‐optic effect device (SEED) designed to work at 1047 nm to match the high power available from a Nd:YLF laser. The device uses a strain‐balanced InGaAs/GaAs multiple quantum well grown on a GaAs substrate with an In
Publikováno v:
Applied Physics Letters. 64:1117-1119
We propose and demonstrate a novel electroabsorptive device which possesses N‐type negative resistance. The device consists of a low responsivity GaAs/AlAs multiple quantum well modulator on top of a GaAlAs photodetector. The structure has a larger
Publikováno v:
Optical Information Technology ISBN: 9783642781421
Shaping of 1.9 ns laser pulses and optical switching behaviour with about 100 ps switching on/off times are measured in a bulk n-GaAs Fabry-Perot etalon. The etalon structure is not optimised, having a finesse of about 4 at low incident power. The im
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da6b06779a93a351791ff04e2ccafa23
https://doi.org/10.1007/978-3-642-78140-7_27
https://doi.org/10.1007/978-3-642-78140-7_27
Nonlinear refraction and absorption in an InGaAsP waveguide containing an InGaAs single quantum well
Publikováno v:
Journal of the Optical Society of America B. 10:492
Measurements have been made at wavelengths between 1486 and 1600 nm of nonlinear refraction and absorption in an InGaAs single quantum well centered in an InGaAsP waveguide. Band-edge resonant nonlinear refractive cross sections as large as σn = −
Publikováno v:
Electronics Letters. 28:1599
An all-epitaxial GaAs/GaAlAs optically bistable Fabry-Perot etalon, designed to maximise the band-edge resonant electronic nonlinearity relative to unwanted thermal effects, has been demonstrated to be capable of being held CW in either of the bistab
Autor:
Xi, Siqi1 (AUTHOR), Wang, Hao1 (AUTHOR), Chen, Jindong1 (AUTHOR) xisiqi@sjtu.edu.cn, Gan, Tian1 (AUTHOR), Zhao, Liang1 (AUTHOR) zhaoliang@shchest.org
Publikováno v:
International Journal of Molecular Sciences. Aug2023, Vol. 24 Issue 15, p12093. 18p.
Publikováno v:
Journal of Applied Crystallography. 4:193-196
Charts are given which provide a rapid and unambiguous way of attributing ideal orientations to regions of crystallite orientation distribution function plots for hexagonal materials.