Zobrazeno 1 - 10
of 17
pro vyhledávání: '"D. J. Dunlavy"'
Publikováno v:
Journal of Applied Physics. 70:225-231
The minority‐carrier lifetime has been measured by time‐resolved photoluminescence in a variety of III‐V epitaxial material including GaAs and AlxGa1−xAs. In cases where Shockley–Read–Hall recombination is dominant, the measured lifetimes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c9159f24699e59739176b1f80180278
https://doi.org/10.1063/1.350315
https://doi.org/10.1063/1.350315
Publikováno v:
Solid State Communications. 75:297-301
Time-integrated hot luminescence spectra have been obtained for 20-period GaAs/Al x Ga 1-x As superlattices and multiple quantum wells with constant well widths and varying barrier thicknesses. Time-averaged hot electron temperatures were determined
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dec2a6f42ba3ab4b9d3ca37ea7078e22
https://doi.org/10.1016/0038-1098(90)90900-v
https://doi.org/10.1016/0038-1098(90)90900-v
Autor:
Richard K. Ahrenkiel, M. S. Kuryla, D. J. Dunlavy, Brian Keyes, D. D. Liu, L. D. Partain, Sally Asher
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 8:2004-2008
A diffusion time‐of‐flight (TOF) technique is described and analysis is performed on four different p‐GaAs heterostructure devices. These p/n junction devices were grown by metal organic chemical vapor deposition (MOCVD). Both Zn and Mg were us
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbae8ab6d2ca6165f582c67c6b12686e
https://doi.org/10.1116/1.576796
https://doi.org/10.1116/1.576796
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 8:3002-3005
Double heterostructures have been grown with the structure Ga0.5In0.5P/GaAs/Ga0.5In0.5P by metalorganic chemical vapor deposition (MOCVD). These GaAs active layers were grown to thicknesses between 1 and 4 μm in this series of devices. The n‐GaAs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48234f568d9a244577d629202aa159be
https://doi.org/10.1116/1.576619
https://doi.org/10.1116/1.576619
Autor:
D. J. Dunlavy, Brian Keyes, Rama Venkatasubramanian, M.L. Timmons, T.S. Colpitts, Richard K. Ahrenkiel
Publikováno v:
Applied Physics Letters. 56:1850-1852
Time‐resolved photoluminescence has been used to examine AlxGa1−xAs/AlyGa1−yAs interfaces, focusing on the recombination velocity. For an Al0.08Ga0.92As/Al0.88Ga0.12As interface, important for solar cells, recombination velocities are about 104
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06c65b1a0e2f4f058a0516690f47664b
https://doi.org/10.1063/1.103066
https://doi.org/10.1063/1.103066
Publikováno v:
MRS Proceedings. 238
The properties (electrical and structural) and the defect levels dominating cadmium telluride (CdTe) films prepared by radio frequency (rf) planar magnetron sputtering, and electrochemical deposition have been determined and compared. The properties
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74eb372a6370d90738bd1e221e593709
https://doi.org/10.1557/proc-238-335
https://doi.org/10.1557/proc-238-335
Publikováno v:
Tenth E.C. Photovoltaic Solar Energy Conference ISBN: 9780792313892
The photovoltaic technology is based on minority-carrier properties of the semiconducting materials under investigation. The improvement of minority-carrier parameters in a cost-effective manner is the focal point of much current research. The minori
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8cbe8629cdacdf32fcbf797b68261eb
https://doi.org/10.1007/978-94-011-3622-8_135
https://doi.org/10.1007/978-94-011-3622-8_135
Publikováno v:
ChemInform. 21
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9bd6b050f99984abd9ea1bcacd5bd1c
https://doi.org/10.1002/chin.199037009
https://doi.org/10.1002/chin.199037009
Publikováno v:
Journal of Applied Physics. 58:4186-4193
Epitaxial GaAs/Ge films are grown by molecular beam epitaxy (MBE) on Si substrates. The effect of various MBE growth conditions on the sample morphology, the defect density, and the optical properties of GaAs and Ge epilayers is examined. Scanning el
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2bf1f672b1a349bf674a8988abe6649
https://doi.org/10.1063/1.335551
https://doi.org/10.1063/1.335551
Autor:
R. K. Ahrenkiel, D. J. Dunlavy
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 7:822-826
The minority‐carrier lifetime of AlxGa1−xAs has been measured in epitaxial materials grown by liquid phase epitaxy (LPE) and metalorganic chemical vapor deposition (MOCVD). A general trend shows that the lifetime decreases with aluminum concentra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7b44cc3a2d14ec148df9352a157f5c8
https://doi.org/10.1116/1.575848
https://doi.org/10.1116/1.575848