Zobrazeno 1 - 10
of 28
pro vyhledávání: '"D. J. Dumin"'
Autor:
D. J. DUMIN
Publikováno v:
Oxide Reliability. :i-ix
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5920e7b7a7d84484fcfc88787165fd8
https://doi.org/10.1142/9789812778062_fmatter
https://doi.org/10.1142/9789812778062_fmatter
Autor:
D. J. DUMIN
Publikováno v:
International Journal of High Speed Electronics and Systems. 11:617-718
The subject of oxide wearout, breakdown, and reliability will be reviewed, largely, from an historical perspective. Five topics will be discussed: oxide breakdown, oxide leakage currents, trap generation, statistics, and reliability. An early model o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1979a5395ae7904f7af063dd63e7d163
https://doi.org/10.1142/s0129156401000988
https://doi.org/10.1142/s0129156401000988
Publikováno v:
Semiconductor Science and Technology. 15:854-861
Trap generation in oxides between 5 and 13.5 nm thick has been measured as a function of the oxide electric field, stress time and electron fluence during constant-voltage stresses. It was found that the trap generation measured under all stress cond
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3cfa704a38871127781993d24fbfe478
https://doi.org/10.1088/0268-1242/15/8/312
https://doi.org/10.1088/0268-1242/15/8/312
Autor:
D. J. Dumin
Publikováno v:
Journal of The Electrochemical Society. 143:3736-3743
The thickness dependence of thin silicon oxide wearout has been measured. The flatband voltages, bulk oxide trap densities, and low-level leakage currents were measured on oxides in the 5 to 11 nm thickness range before and after high-voltage stressi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56d3ceeb8ae576855011a67ca41368e6
https://doi.org/10.1149/1.1837281
https://doi.org/10.1149/1.1837281
Autor:
T. W. Hughes, D. J. Dumin
Publikováno v:
Journal of Applied Physics. 79:3089-3093
The relative densities of high‐voltage stress‐generated traps near the anode and cathode in 10‐nm‐thick silicon oxides have been measured after both positive and negative gate voltage stressing. The density of traps near the stress anode and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7753ceee39cdca04729145d3772fd0e8
https://doi.org/10.1063/1.361251
https://doi.org/10.1063/1.361251
Autor:
D. J. Dumin
Publikováno v:
Journal of The Electrochemical Society. 142:1272-1277
A model describin how wearout leads to breakdown in thin silicon oxides has been developed. During wearout traps are generated inside of the oxide and at the oxide interfaces. In oxides thinner than 20 nm the dominant trap generation mechanism is det
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e4def40fa5b1779e84a99b62e224ac0
https://doi.org/10.1149/1.2044163
https://doi.org/10.1149/1.2044163
Publikováno v:
Journal of The Electrochemical Society. 142:930-934
The density of traps generated inside of thin SiO 2 has been calculated by measuring the transient discharge of the traps and applying the tunneling front model to these discharges. The number of traps created by the high voltage stress was proportio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b98beb67d25653eba3756a40d91823b2
https://doi.org/10.1149/1.2048560
https://doi.org/10.1149/1.2048560
Autor:
R. Natarajan, D. J. Dumin
Publikováno v:
Journal of The Electrochemical Society. 142:645-649
A study was conducted on the reliability aspects of thin reoxidized nitrided oxides (ROXNOX), as an alternative gate dielectric to thermal silicon dioxide in submicron metal oxide semiconductor (MOS) devices. MOS capacitors, with ROXNOX gate oxides o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9594616bb3435ce381494d7e7beeba9
https://doi.org/10.1149/1.2044115
https://doi.org/10.1149/1.2044115
Autor:
R. S. Scott, D. J. Dumin
Publikováno v:
Journal of The Electrochemical Society. 142:586-590
Excess high voltage stress-induced low-level leakage currents through thin silicon oxides, previously described as dc currents, are shown to decay to zero given adequate observation time and, thus, have no dc component. The amount of increase in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::309166536ad7448b7d973751641ec4c5
https://doi.org/10.1149/1.2044103
https://doi.org/10.1149/1.2044103
Publikováno v:
Journal of Applied Physics. 76:319-327
The low‐level leakage currents in thin silicon oxide films were measured before and after the oxides had been stressed at high voltages. Four components of current were identified. These components were the tunneling current, the capacitive current
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22a0fb87907079708d8c13e0addfb469
https://doi.org/10.1063/1.357147
https://doi.org/10.1063/1.357147