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In situ real time measurement of the incubation time for silicon nucleation on silicon dioxide in a rapid thermal process

Autor: C. Y. Zhao, Y. Z. Hu, Q. Liu, E. A. Irene, D. J. Diehl

Publikováno v: Applied Physics Letters. 66:700-702

Real time ellipsometry and atomic force microscopy (AFM) were used to measure critical nucleation parameters for polycrystalline silicon deposition on an amorphous SiO2 layer by rapid thermal chemical vapor deposition (RTCVD) using disilane (5% in he

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e19a26d8ce4dec19b4fab3e250e39636
https://doi.org/10.1063/1.114104

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Functional neuroanatomy of verbal free recall: A replication study

Autor: J T, Becker, M A, Mintun, D J, Diehl, J, Dobkin, A, Martidis, D C, Madoff, S T, Dekosky

Publikováno v: Human brain mapping. 1(4)

The functional neuroanatomy of verbal memory was investigated using verbal free recall during H2 (15) O positron emission tomography (PET). Twelve young (25-40 years old) normal control subjects participated in eight scans during a single scanning se

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::c2b2002e4990b8ab5aeebdb2a3f803e0
https://pubmed.ncbi.nlm.nih.gov/24591197

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Pretreatment systolic orthostatic blood pressure and treatment response in geriatric depression: a revisit

Autor: D J, Diehl, P R, Houck, C, Paradis, M, Miller, C F, Reynolds

Publikováno v: Journal of clinical psychopharmacology. 13(3)

Three previous studies have found significant positive correlations between pretreatment systolic orthostatic blood pressure (PSOP) and tricyclic antidepressant (TCA) response in geriatric depression (i.e., the greater the pretreatment orthostatic dr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::c447c41035b58b92631fcbe779d87878
https://pubmed.ncbi.nlm.nih.gov/8354735

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Real time investigation of nucleation and growth of silicon on silicon dioxide using silane and disilane in a rapid thermal processing system

Autor: C. L. Wang, D. J. Diehl, C. Y. Zhao, Eugene A. Irene, Y. Z. Hu, Q. Liu, Dennis M. Maher, K. N. Christensen, D. Venable

Publikováno v: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 14:744

The kinetics of the nucleation and growth of Si films on amorphous SiO2‐covered Si using rapid thermal chemical vapor deposition from SiH4 and Si2H6 (5% in He) were compared at temperatures between 600 and 800 °C and reactant gas pressures between

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ebcbf4a4bdcc91772b76021a9c6bb194
https://doi.org/10.1116/1.588708

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