Zobrazeno 1 - 10
of 41
pro vyhledávání: '"D. I. Tetelbaum"'
Autor:
A. A. Konakov, D. O. Filatov, D. S. Korolev, A. I. Belov, A. N. Mikhaylov, D. I. Tetelbaum, Mahesh Kumar
Publikováno v:
AIP Advances, Vol 6, Iss 1, Pp 015007-015007-11 (2016)
Using the envelope-function approximation, the single-particle states of electrons and holes in spherical GaN nanocrystals embedded in different amorphous dielectric matrices (SiO2, Al2O3, HfO2 and Si3N4) have been calculated. Ground state energies o
Externí odkaz:
https://doaj.org/article/7b04959ee8934aa5be750cdb2f2c1b17
Autor:
M. N. Koryazhkina, D. O. Filatov, S. V. Tikhov, A. I. Belov, D. S. Korolev, A. V. Kruglov, R. N. Kryukov, S. Yu. Zubkov, V. A. Vorontsov, D. A. Pavlov, D. I. Tetelbaum, A. N. Mikhaylov, S. Kim
Publikováno v:
Nanobiotechnology Reports. 17:866-872
Autor:
M. N. Koryazhkina, D. O. Filatov, S. V. Tikhov, A. I. Belov, D. S. Korolev, A. V. Kruglov, R. N. Kryukov, S. Yu. Zubkov, V. A. Vorontsov, D. A. Pavlov, D. I. Tetelbaum, A. N. Mikhaylov, S. Kim
Publikováno v:
Nanobiotechnology Reports. 16:745-754
Autor:
A A Nikolskaya, D S Korolev, A N Mikhaylov, T D Mullagaliev, Yu I Chigirinsky, A I Belov, A V Nezhdanov, V N Trushin, D E Nikolichev, A V Almaev, R Giulian, M Kumar, D I Tetelbaum
Publikováno v:
Journal of Physics: Conference Series. 2103:012062
Synthesis and modification of gallium oxide as a wide-bandgap semiconductor is a topical task in the fields of power electronics, UV detectors, gas sensors, telecommunication. In the present work, the Ga2O3 films deposited on sapphire substrates by m
Publikováno v:
Semiconductors 53(2019)8, 1004-1010
By means of Rutherford backscattering spectrometry, electron microscopy, and energy-dispersive X-ray spectroscopy, the distribution and interaction of In and As atoms implanted into thermally grown SiO2 films to concentrations of about 1.5 at % are s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bbce46ee1f8c4bfc0ad38303ec8965ea
https://www.hzdr.de/publications/Publ-30063-1
https://www.hzdr.de/publications/Publ-30063-1
Autor:
A. A. Konakov, A. A. Nikolskaya, M. O. Marychev, D. A. Pavlov, A. I. Belov, R. I. Murtazin, A. N. Mikhaylov, D. S. Korolev, D. I. Tetelbaum
Publikováno v:
Journal of Physics: Conference Series. 1695:012031
To study the mechanism of a 9R-Si hexagonal phase formation upon ion irradiation of the SiO2/Si system, three types of experimental samples have been investigated by photoluminescence (PL) spectroscopy and transmission electron microscopy (TEM): SiO2
Autor:
D. I. Tetelbaum, D. S. Korolev, S. A. Pavlov, A. E. Parafin, A. N. Mikhaylov, D. V. Masterov, A. I. Okhapkin, E. V. Skorokhodov, S. A. Korolev, P. A. Yunin, V. K. Vasiliev
Publikováno v:
Поверхность. Рентгеновские, синхротронные и нейтронные исследования. :80-83
Autor:
A. V. Ikonnikov, D. V. Masterov, P. A. Yunin, D. I. Tetelbaum, S. S. Ustavschikov, Alexey Mikhaylov, A. V. Antonov, S. V. Morozov, V. K. Vasiliev, S. A. Pavlov, A. E. Parafin, D. A. Savinov, Yu. N. Nozdrin
Publikováno v:
Physica C: Superconductivity and its Applications. 568:1353581
We report the effect of disorder on superconducting phase transition of YBa 2 Cu 3 O 7 − x epitaxial thin films in external magnetic fields. The disorder was produced by several successive acts of oxygen ion implantation. Controlling a total accumu
Autor:
D. I. Tetelbaum, A. V. Konstantinova, D. S. Yumanov, A. P. Popov, A. V. Stepanov, A. V. Kovalenko, A. I. Dimitrieva
Publikováno v:
IOP Conference Series: Earth and Environmental Science. 433:012009
The effect of hypersonic waves excited by a heterostructure based on a silicon wafer with natural oxide on the survival of planaria after their decapitation has been experimentally investigated. The aim of the work was to study the physical and biolo
Autor:
A. A. Nikolskaya, D. S. Korolev, A. I. Belov, D. I. Tetelbaum, A. N. Tereshchenko, A. N. Mikhaylov
Publikováno v:
Journal of Physics: Conference Series. 1410:012152
The regularities of ion synthesis of dislocation-related luminescence centers in silicon have been investigated. By varying the conditions of additional irradiation with boron ions, as well as the conditions of subsequent annealing, we obtain an incr