Zobrazeno 1 - 5
of 5
pro vyhledávání: '"D. I. Tetel'baum"'
Publikováno v:
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 6:262-265
A new mechanism for long range effect is proposed in this study. The decreased density region in the vicinity of dislocations or grain boundaries acts as a gradient waveguide for hypersound phonons generated in the sample oxide layer. As a result of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d31bdc64ebebddd87eaa05b8472d08dd
https://doi.org/10.1134/s1027451012030160
https://doi.org/10.1134/s1027451012030160
Publikováno v:
Journal of Communications Technology and Electronics. 52:1054-1057
The effect of phosphorus impurities on the electronic structure of silicon single crystals and SiO2: Si nanocomposites is studied. The SiO2: Si structures with phosphorus impurities that are annealed over 2 h at a temperature of 1000°C exhibit an in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79ba90458c3869aa62fafa2bef730646
https://doi.org/10.1134/s106422690709015x
https://doi.org/10.1134/s106422690709015x
Publikováno v:
Journal of Experimental and Theoretical Physics Letters. 70:385-389
We report a new effect, observed experimentally in silicon under irradiation with visible-range light with a power density of 0.2–1.5 W/cm2 for 8 s. The effect consists in an increase of microhardness on the side opposite to the irradiated side and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6922f052f57c00586d5257cfbab4330
https://doi.org/10.1134/1.568185
https://doi.org/10.1134/1.568185
Autor:
D. I. Tetel’baum, I. T. Serenkov, V. I. Sakharov, Elena I. Shek, Nikolai A. Sobolev, A. M. Emel’yanov
Publikováno v:
Semiconductors. 41:537-539
Implantation of silicon ions with an energy of 100 keV at a dose of 1 × 1017 cm−2 into n-type floatzone Si does not lead to the formation of an amorphous layer. Subsequent annealing in a chlorine-containing atmosphere at 1100°C gives rise to disl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e1d8761b33808e86568b82dc39727c1
https://doi.org/10.1134/s1063782607050107
https://doi.org/10.1134/s1063782607050107
Publikováno v:
Рост Кристаллоь / Rost Kristallov / Growth of Crystals ISBN: 9781461571186
A new method of synthesizing compounds has recently been developed, namely the bombardment of solid targets with ions of energy above 10 keV. This is called ion-beam synthesis. The ions are implanted in the target at a certain depth, usually some hun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0505fe667728a33aea7a071c9af46960
https://doi.org/10.1007/978-1-4615-7116-2_10
https://doi.org/10.1007/978-1-4615-7116-2_10
