Zobrazeno 1 - 10
of 42
pro vyhledávání: '"D. I. Kuritsin"'
Autor:
D. A. Ryzhov, Alexander A. Dubinov, D. I. Kuritsin, M. A. Fadeev, Sergey A. Dvoretsky, Carlo Sirtori, V. V. Utochkin, Z. F. Krasilnik, S. V. Morozov, V. Ya. Aleshkin, Frederic Teppe, V. V. Rumyantsev, A. V. Antonov, V. I. Gavrilenko, N. N. Mikhailov
Publikováno v:
Journal of Infrared, Millimeter, and Terahertz Waves. 41:750-757
Currently semiconductor lasers in the wavelength range from 20 to 60 μm are scarce. HgTe/CdHgTe heterostructures is a potential basis for alternative sources of coherent radiation in this range. We propose that in such structures carrier heating is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f26a7026f39219e472263145c80f7b8a
https://doi.org/10.1007/s10762-020-00706-1
https://doi.org/10.1007/s10762-020-00706-1
Autor:
D. I. Kuritsin, E. O. Parshin, Boris A. Andreev, Yu. A. Nikolaev, M.I. Makovijchuk, Nikolai A. Sobolev
Publikováno v:
Semiconductors. 33:407-409
In this paper the photoluminescence (PL) of holmium-doped silicon is discussed. The silicon was first implanted with holmium ions at energies of 1–2 MeV and doses of 1×1013–3×1014 cm−2, and then annealed at temperatures of 620–900 °C for 0
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b5c8f81ad0787ffc050d645e5377b6f
https://doi.org/10.1134/1.1187703
https://doi.org/10.1134/1.1187703
Autor:
A. M. Kadykov, D. I. Kuritsin, Nikolay N. Mikhailov, Vladimir Rumyantsev, S. V. Morozov, Alexander A. Dubinov, K. E. Kudryavtsev, S. A. Dvoretskii, Frederic Teppe, A. V. Antonov, Vladimir I. Gavrilenko
Publikováno v:
Journal of Physics: Conference Series. 647:012008
The optical properties of a number of Hg1-xCdxTe bulk epilayers (x = 0.152 - 0.23) and heterostructures with quantum wells (QW) based on narrow gap HgCdTe are examined aiming to reveal the prospects of such structures for laser development in long wa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77a45c9cbdc1aa989c75c0784bcf3896
https://doi.org/10.1088/1742-6596/647/1/012008
https://doi.org/10.1088/1742-6596/647/1/012008
Autor:
Nikolay N. Mikhailov, Vladimir Rumyantsev, D. I. Kuritsin, A. M. Kadykov, K. E. Kudryavtsev, S. V. Morozov, S. A. Dvoretskii, A. V. Antonov, Alexander A. Dubinov, Vladimir I. Gavrilenko
Publikováno v:
Applied Physics Letters. 107:042105
Experimental evidence of long wavelength superluminescence (SL), i.e., amplification of spontaneous emission, in narrow gap HgCdTe bulk epitaxial film at 100 K is reported. Photoluminescence line narrowing is observed at 8.4 μm as pump power increas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52181357bb065994a1557dd6e651e7c4
https://doi.org/10.1063/1.4926927
https://doi.org/10.1063/1.4926927
Autor:
D. M. Gaponova, N. Samal, S. V. Morozov, V. I. Gavrilenko, D. I. Kryzhkov, D. I. Kuritsin, Z. F. Krasilnik, A. V. Antonov, Yu. G. Sadofyev, A. N. Yablonsky
Publikováno v:
Journal of Applied Physics. 113:163107
We present the experimental results of time-resolved photoluminescence spectroscopy in type II GaAs/GaAs0.64Sb0.36 quantum well heterostructures. At moderate optical excitation densities (below 103 W/cm2), we observe blue shift of the photoluminescen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2ca9fcdbaa0d3da502e9737c50fa03f
https://doi.org/10.1063/1.4802500
https://doi.org/10.1063/1.4802500
Autor:
D. I. Kuritsin, Artem N. Yablonskiy, A. V. Antonov, I. V. Erofeeva, S. V. Morozov, V. I. Gavrilenko, L. V. Gavrilenko, K. V. Maremyanin, E. E. Orlova
Publikováno v:
Semiconductor Science and Technology. 26:085009
In this paper we report a study on relaxation of the impurity photoresponse in strained p-Ge/GeSi heterostructures excited by pulsed THz radiation. The relaxation time is found to increase with the applied dc electric field, which is interpreted with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::785ec8ccc90ed18861a498c1d6287d47
https://doi.org/10.1088/0268-1242/26/8/085009
https://doi.org/10.1088/0268-1242/26/8/085009
Autor:
Sergey M. Sergeev, D. I. Kuritsin, K. V. Maremyanin, A. V. Antonov, E. E. Orlova, M. S. Joludev, I. V. Erofeeva, S. V. Morozov, L. V. Gavrilenko, Vladimir I. Gavrilenko
Publikováno v:
Journal of Physics: Conference Series. 193:012087
In n-GaAs/InGaAsP and p-Ge/GeSi quantum well heterostructures excited by both the picosecond broad band and the nanosecond narrow band pulses of THz radiation the relaxation times of the impurity photoconductivity were measured. In one of the sample
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15884ed1a12a0b6989fd5668b9ba96ab
https://doi.org/10.1088/1742-6596/193/1/012087
https://doi.org/10.1088/1742-6596/193/1/012087
Publikováno v:
Journal of Applied Physics; 2/28/2022, Vol. 131 Issue 8, p1-6, 6p
Autor:
S V Morozov, V V Rumyantsev, A M Kadykov, A A Dubinov, A V Antonov, K E Kudryavtsev, D I Kuritsin, N N Mikhailov, S A Dvoretskii, F Teppe, V I Gavrilenko
Publikováno v:
Journal of Physics: Conference Series; Oct2015, Vol. 647 Issue 1, p1-1, 1p
Autor:
Li, Hang, Wang, Ying, Guo, Yingnan, Wang, Shufang, Fu, Guangsheng, Mazur, Yuriy I., Ware, Morgan E., Salamo, Gregory J., Liang, Baolai
Publikováno v:
Applied Physics Letters; 4/24/2023, Vol. 122 Issue 17, p1-7, 7p