Ferroionic inversion of spin polarization in a spin-memristor

Autor: V. Rouco, F. Gallego, D. Hernandez-Martin, D. Sanchez-Manzano, J. Tornos, J. I. Beltran, M. Cabero, F. Cuellar, D. Arias, G. Sanchez-Santolino, F. J. Mompean, M. Garcia-Hernandez, A. Rivera-Calzada, M. Varela, M. C. Muñoz, C. Leon, Z. Sefrioui, J. Santamaria

Publikováno v: APL Materials, Vol 9, Iss 3, Pp 031110-031110-5 (2021)

Magnetoelectric coupling in artificial multiferroic interfaces can be drastically affected by the switching of oxygen vacancies and by the inversion of the ferroelectric polarization. Disentangling both effects is of major importance toward exploitin

Externí odkaz: https://doaj.org/article/cb63c9cd96434029be0e2aa4cb3bd2c9

Controlled sign reversal of electroresistance in oxide tunnel junctions by electrochemical-ferroelectric coupling

Autor: Maria Varela, Federico Mompean, Alberto Rivera-Calzada, Mariona Cabero, M. C. Muñoz, J. I. Beltrán, Carmen Munuera, Zouhair Sefrioui, D. Hernandez-Martin, V. Rouco, Jacobo Santamaria, S. J. Pennycook, Carlos León, F. Cuéllar, Javier Tornos, Mar García-Hernández, Diego Arias, G. Sanchez-Santolino, D. Sanchez-Manzano, Fernando Gallego

Publikováno v: E-Prints Complutense. Archivo Institucional de la UCM
instname
E-Prints Complutense: Archivo Institucional de la UCM
Universidad Complutense de Madrid

The persistence of ferroelectricity in ultrathin layers relies critically on screening or compensation of polarization charges which otherwise destabilize the ferroelectric state. At surfaces, charged defects play a crucial role in the screening mech

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::56227cc43dbd2b0289078da21ec23b90
https://eprints.ucm.es/id/eprint/63858/1/BeltranFinez14libre.pdf

Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.

High On/Off Ratio Memristive Switching of Manganite/Cuprate Bilayer by Interfacial Magnetoelectricity

Autor: Xiao Shen, Timothy J. Pennycook, Maria Varela, John W. Freeland, Sokrates T. Pantelides, Ana Fernández Pérez, Chenhui Zhu, Padraic Shafer, D. Hernandez-Martin, Yaohua Liu, Zouhair Sefrioui, Suzanne G. E. te Velthuis, Carlos León, Jacobo Santamaria, Yevgeniy Puzyrev

Publikováno v: Advanced Materials Interfaces, vol 3, iss 16
E-Prints Complutense: Archivo Institucional de la UCM
Universidad Complutense de Madrid
Advanced Materials Interfaces
Shen, X; Pennycook, TJ; Hernandez-Martin, D; Pérez, A; Puzyrev, YS; Liu, Y; et al.(2016). High On/Off Ratio Memristive Switching of Manganite/Cuprate Bilayer by Interfacial Magnetoelectricity. Advanced Materials Interfaces, 3(16). doi: 10.1002/admi.201600086. Lawrence Berkeley National Laboratory: Retrieved from: http://www.escholarship.org/uc/item/58d462p5
E-Prints Complutense. Archivo Institucional de la UCM
instname

© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Memristive switching serves as the basis for a new generation of electronic devices. Conventional memristors are two-terminal devices in which the current is turned on and off by redistributing point

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a58a4c1a19e6b573a97be4e1f436b913
https://escholarship.org/uc/item/58d462p5

Modified magnetic anisotropy at LaCoO3/La0.7Sr0.3MnO3 interfaces

Autor: Alberto Rivera-Calzada, Titusz Fehér, Maria Varela, F. Cuéllar, Federico Mompean, Mariona Cabero, Carlos León, Fernando Gallego, Zouhair Sefrioui, Marcela Del Rio, Norbert M. Nemes, K. Nagy, Javier Tornos, D. Hernandez-Martin, Jacobo Santamaria, Mar García-Hernández, Nicolas Reyren, Anke Sander

Publikováno v: APL Materials, Vol 5, Iss 9, Pp 096104-096104-7 (2017)
E-Prints Complutense. Archivo Institucional de la UCM
instname
Digital.CSIC. Repositorio Institucional del CSIC
E-Prints Complutense: Archivo Institucional de la UCM
Universidad Complutense de Madrid

Controlling magnetic anisotropy is an important objective towards engineering novel magnetic device concepts in oxide electronics. In thin film manganites, magnetic anisotropy is weak and it is primarily determined by the substrate, through induced s

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a3fdc06c4db8fe50c494ed08c777f428
https://doaj.org/article/f35fa07d68fc45a1b486d869edd9c2d1