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Publikováno v:
12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094).
High-density and high-speed MOS-integrated devices require low gate resistance. Metallization of the gate electrodes reduces gate sheet resistance, improves switching efficiency, reduces distributed RC propagation delay, and possibly enhances device
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2cdd314cc680b9901f7c0c572341dd86
https://doi.org/10.1109/ispsd.2000.856801
https://doi.org/10.1109/ispsd.2000.856801
