Zobrazeno 1 - 4
of 4
pro vyhledávání: '"D. HA. Dao"'
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 7, Pp 99-105 (2019)
The development and research of new constructive solutions, materials and technologies for sensor systems production is an actual problem. The transistor with high electron mobility (HEMT) is increasingly being used in such systems. The device-techno
Externí odkaz:
https://doaj.org/article/3f262c1746e94d25871815a4af81eea7
Autor:
D. HA. Dao, V. S. Volchek, M. S. Baranava, I. Yu. Lovshenko, D. C. Hvazdouski, V. R. Stempitsky
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 7, Pp 167-171 (2019)
The results of the device simulation of a three-dimensional magnetometer based on Hall sensors integrated in a standard CMOS technology are presented. The Hall voltage vs magnetic field, Hall voltage vs magnetic field deviation angle, and sensitivity
Externí odkaz:
https://doaj.org/article/d00fb8d5dc564e9cb360ce3c3fd710d3
Autor:
D. Ha. Dao, V. R. Stempitsky
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 4, Pp 64-70 (2019)
The results of device-technological and schematic simulation of the silicon Hall sensor with the purpose of determine its dynamic characteristics are presented. The influence of the dimensions of the active region is investigated, the theoretical and
Externí odkaz:
https://doaj.org/article/b9c1374a320d4c2dbb734e846a0ee4f1
Special topic volume on Advanced Manufacturing Technologies.
