Zobrazeno 1 - 10
of 16
pro vyhledávání: '"D. H. J. Totterdell"'
Publikováno v:
Journal of Physics C: Solid State Physics. 8:243-248
Publikováno v:
physica status solidi (a). 71:239-243
Polarization effects are observed in cadmium telluride radiation detectors that have been exposed to white light and are irradiated with 5.48 MeV α-particles from an 241Am source. For irradiation on the negative electrode of the detector the pulse h
Autor:
D H J Totterdell
Publikováno v:
Journal of Physics D: Applied Physics. 19:L111-L114
Aluminium-polyimide-silicon (MIS) capacitors have been fabricated using high-resistivity p-type silicon substrates. Capacitance-voltage measurements have been carried out before and after voltage stressing, and on previously heat treated substrates.
Autor:
N G Blamires, D H J Totterdell
Publikováno v:
Journal of Physics D: Applied Physics. 16:2361-2365
Cadmium telluride has been irradiated with pulses from a Q-switched ruby laser with a homogenised beam. Single pulse irradiations of CdTe produce a non-uniform rippled surface indicative of melting. As the energy density is increased the ripple size
Publikováno v:
IEEE Transactions on Nuclear Science. 33:1310-1315
When a metal-oxide-semiconductor (MOS) device is irradiated, charge builds up in the oxide and new interface states are also created. The effect has been shown to constitute a useful dosimetric principle. The trapped charges may relax in various ways
Autor:
R C Newman, D H J Totterdell
Publikováno v:
Journal of Physics C: Solid State Physics. 8:589-598
Samples of silicon doped with oxygen alone, or with oxygen and carbon have been irradiated with fast neutrons up to a maximum dose of 1020 cm-2. It is shown that there is a progressive decrease in the resolution of the fine structure of the 9 mu m ba
Autor:
R C Newman, D H J Totterdell
Publikováno v:
Journal of Physics C: Solid State Physics. 8:3944-3954
Crystals of silicon which were pure, and either monocrystalline or polycrystalline, or were doped with oxygen, or with carbon and oxygen have been irradiated at room temperature with fast neutrons to doses in the range 1015-1020 n0 cm-2. After irradi
Autor:
D H J Totterdell, D J S Findlay
Publikováno v:
Semiconductor Science and Technology. 3:388-396
Semiconductor body having desired conductivity characteristics is formed by irradiating a body of semiconductor material with high energy to photons to form elements by photonuclear reaction capable of imparting the desired conductivity. The high ene
Publikováno v:
Physica Status Solidi (a). 86:821-826
Thermally stimulated current measurements on high resistivity CdTe:Cl show the presence of a deep hole trap, with an activation energy of EV + 0.33 eV, that notably degrades γ-ray spectrometer performance. The trap is associated with copper impuriti
Autor:
D. H. J. Totterdell, F. J. Bryant
Publikováno v:
Radiation Effects. 9:115-120
The cathodoluminescence edge emission of cadmium telluride at 4.2 °K has been observed, (a) before and after displacement of cadmium atoms or displacement of cadmium and tellurium atoms by monoenergetic electrons, (b) firing in vacuum or an over-pre