Zobrazeno 1 - 10
of 70
pro vyhledávání: '"D. H. Chow"'
Publikováno v:
physica status solidi (c). 2:1444-1448
We characterize our InAs/AlSb double tunnel barrier heterostructure as the base electrode with the well thickness of 12 nm and symmetric barrier thickness of 2 nm by ballistic electron emission microscopy/spectroscopy using the top InAs layer of hete
Publikováno v:
Proceedings of the IEEE. 91:741-751
We propose an InAs/GaSb/AlSb-based asymmetric resonant interband tunneling diode (a-RITD) as a spin filter. The device exploits the Rashba effect to achieve spin polarization under zero magnetic field using nonmagnetic III-V semiconductor heterostruc
Publikováno v:
physica status solidi (c). :986-991
Publikováno v:
Physical Review Letters. 85:4562-4565
We show how cross-sectional scanning tunneling microscopy may be used to reconstruct the Sb segregation profiles in GaInSb $/$InAs strained-layer superlattices. These profiles are accurately described by a one-dimensional model parametrizing the spat
Publikováno v:
Czechoslovak Journal of Physics. 49:833-836
This work shows how ballistic electron emission microscopy and spectroscopy (BEEM/BEES) can be used for study of the tunneling double barrier heterostructures. From positions of resonant levels follows that roughness at the interfaces is present. The
Autor:
R J Wagner, Craig A. Hoffman, Jerry R. Meyer, M. J. Yang, J. P. Omaggio, R. H. Miles, D. H. Chow
Publikováno v:
Semiconductor Science and Technology. 8:S112-S116
InAs/Ga1-xInxSb superlattices have been investigated by magneto-optical and magnetotransport techniques. Bandgaps, determined from interband magneto-optical measurements and from the temperature dependence of the intrinsic carrier concentration, are
Autor:
M. Micovic, A. Kurdoghlian, K. Shinohara, I. Milosavljevic, S. D. Burnham, M. Hu, A. L. Corrion, W. S. Wong, A. Schmitz, P. B. Hashimoto, P. J. Willadsen, D. H. Chow, A. Fung, R. H. Lin, L. Samoska, P. P. Kangaslahti, B. H. Lambrigtsen, P. F. Goldsmith
Publikováno v:
2010 IEEE MTT-S International Microwave Symposium.
Publikováno v:
Journal of Applied Physics. 71:211-214
Strained Ga1−xInxSb/InAs superlattices exhibiting a high degree of structural perfection have been grown on GaSb substrates. The superlattices display ideal, defect‐free structure, to within the resolution limits of transmission electron microsco
Publikováno v:
Semiconductor Science and Technology. 6:C47-C51
Superlattices consisting of combinations of III-V semiconductors with type II band alignments are of interest for infrared applications because their energy gaps can be made smaller than those of any 'natural' III-V compounds. Specifically, it has be
Autor:
T. C. McGill, David Z. Ting, D. A. Collins, J. R. Söderström, Edward T. Yu, D. H. Chow, Y. Rajakarunanayake
Publikováno v:
Journal of Crystal Growth. 111:664-668
We report the experimental observation of negative differential resistance (NDR) at room temperature from a structure consisting of a single InAs(n)/GaSb(p) interface. The peak current densities ranged from 4.2×104 to 8.0×104 A/cm2 depending on how