Zobrazeno 1 - 10
of 57
pro vyhledávání: '"D. Guillet"'
Autor:
D. Atanasov, F. Cresto, L. Nies, M. Pomorski, M. Versteegen, P. Alfaurt, V. Araujo-Escalona, P. Ascher, B. Blank, L. Daudin, D. Guillet, X. Fléchard, J. Ha, A. Husson, M. Gerbaux, J. Giovinazzo, S. Grévy, T. Kurtukian-Nieto, L. Leterrier, R. Lica, E. Liénard, C. Mihai, C. Neacsu, A. Ortega-Moral, G. Pascovici, M. Roche, N. Severijns, S. Vanlangendonck, A. Welker, D. Zákoucký
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 1050:168159
The article describes the commissioning and technical development of the Weak Interaction Studies with 32Ar Decay (WISArD) experiment, installed at the radioactive ion-beam facility ISOLDE/CERN. The experiment aims to extend the present limits on sca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0e3e7d05efde23544ec37594e0c64755
https://doi.org/10.1016/j.nima.2023.168159
https://doi.org/10.1016/j.nima.2023.168159
Akademický článek
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Akademický článek
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Autor:
D. Guillet, M.-P. Guiho-Bailly
Publikováno v:
EMC - Toxicologie-Pathologie. 2:98-110
Resume En ayant en tete les questionnements des cliniciens de terrain, les auteurs s'efforcent de presenter les concepts et donnees actuelles de la psychodynamique et de la psychopathologie (psychotraumatologie comprise) du travail. L'accent est plac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d5f21f1700bdbbe2487b7435a43d3670
https://doi.org/10.1016/j.emctp.2005.04.001
https://doi.org/10.1016/j.emctp.2005.04.001
Autor:
D. Guillet
Publikováno v:
Environment and History. 8:217-236
Stakeholder co-management, a relatively new approach to environmental management, has come under criticism in recent years. The ethnographic and ethnohistorical record of co-management offers a rich body of experiences in responding to these criticis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c944889710323b214d55c66e3a70b8c
https://doi.org/10.3197/096734002129342657
https://doi.org/10.3197/096734002129342657
Publikováno v:
Journal of Non-Crystalline Solids. :689-693
Thin films of SiGe were prepared on SiO2 by low pressure chemical vapor deposition (LPCVD) from SiH4 and GeH4. With this technique there is in situ control of incorporation of germanium in SiGe films. In the deposition conditions, films of Si1−xGex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02733655a9dc39d8c82794b2e92853bc
https://doi.org/10.1016/s0022-3093(99)00784-x
https://doi.org/10.1016/s0022-3093(99)00784-x
Publikováno v:
MSE
This tutorial is intended for graduate students specialized in microelectronics formation. This training allows the student to fabricate a simple but original device. A thin film transistor for which the active layer is made of silicon-germanium allo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47307be353cb0e1dfdf451caa49c90be
https://doi.org/10.1109/mse.1999.787042
https://doi.org/10.1109/mse.1999.787042
Publikováno v:
Microelectronics Education ISBN: 9789401061476
This technological work is intended to DESS students (bac+5 level) in the frame of a project included in their cursus. The main goal is to apply the microelectronics technology knowledge already got after one week spent to fabricate a monocrystalline
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9df6020fb5bb776e02a5944d6486d2db
https://doi.org/10.1007/978-94-011-5110-8_24
https://doi.org/10.1007/978-94-011-5110-8_24
Autor:
J, Bachet, B, Goudot, G, Dreyfus, J L, Termignon, C, Banfi, A, Piquois, D, Brodaty, C, Dubois, P, Delentdecker, D, Guillet
Publikováno v:
Journal of cardiac surgery. 12
From October 1973 to December 1995, 251 patients (204 male, 47 female) aged from 10 to 75 years (mean: 46.6 +/- 15) underwent an ascending aortic replacement with a composite graft for: dystrophic aneurysm (AN), 168 cases (66.9%); chronic dissection
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::49c581cdea32444c003dc39eeb232cdf
https://pubmed.ncbi.nlm.nih.gov/9271741
https://pubmed.ncbi.nlm.nih.gov/9271741
Autor:
K. Kis-Sion, Olivier Bonnaud, D. Guillet, Tayeb Mohammed-Brahim, Anne-Claire Salaün, D. Briand
Publikováno v:
MRS Proceedings. 398
Solid Phase Crystallization of amorphous silicon films, deposited by the Low Pressure Chemical Vapor Deposition technique, is studied by in-situ monitoring the film conductance. The crystal growth rate VG, deduced from this measurement, was found to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::019a655d85fb7a718721f92ed27d5a1b
https://doi.org/10.1557/proc-398-387
https://doi.org/10.1557/proc-398-387